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Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 49, 期号: 10, 页码: Art. No. 104002
Authors:  Li YQ (Li Yueqiang);  Wang XD (Wang Xiaodong);  Xu XN (Xu Xiaona);  Liu W (Liu Wen);  Chen YL (Chen Yanling);  Yang FH (Yang Fuhua);  Tan PH (Tan Pingheng);  Zeng YP (Zeng Yiping);  Li, YQ, Chinese AcadSci, InstSemicond, Engn Res CtrSemicond Integrated Technol, Beijing 100083, Peoples R China. 电子邮箱地址: xdwang@semi.ac.cn
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Real-space Transfer  2-dimensional Electron-gas  
Optimization of grid design for solar cells 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 1, 页码: 42-45
Authors:  Liu Wen;  Li Yueqiang;  Chen Jianjun;  Chen Yanling;  Wang Xiaodong;  Yang Fuhua
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内嵌InAs量子点的场效应晶体管特性研究 期刊论文
功能材料与器件学报, 2010, 卷号: 16, 期号: 6, 页码: 596-599
Authors:  李越强;  刘雯;  王晓东;  陈燕凌;  杨富华;  曾一平
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A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 3, 页码: 87-91
Authors:  Du Rui;  Dai Yang;  Chen Yanling;  Yang Fuhua
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高迁移率量子点场效应晶体管及其制作方法 专利
专利类型: 发明, 专利号: CN200910091632.2, 公开日期: 2011-08-31
Inventors:  李越强;  刘雯;  王晓东;  陈燕玲;  杨富华
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对砷化镓太阳电池帽层进行选择性腐蚀的化学腐蚀液 专利
专利类型: 发明, 专利号: CN200910237097.7, 公开日期: 2011-08-31
Inventors:  刘雯;  李越强;  王晓东;  陈燕凌;  杨富华
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一种基于自组织量子点的存储器及其制备方法 专利
专利类型: 发明, 专利号: CN102136492A, 公开日期: 2012-09-07, 2011-07-27, 2012-09-07
Inventors:  李越强;  王晓东;  徐晓娜;  刘雯;  陈燕玲;  杨富华
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