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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [5]
集成光电子学国家重点... [2]
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赵德刚 [7]
江德生 [3]
朱建军 [3]
张书明 [3]
王玉田 [2]
吴亮亮 [1]
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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:
Deng Y
;
Zhao DG
;
Le LC
;
Jiang DS
;
Wu LL
;
Zhu JJ
;
Wang H
;
Liu ZS
;
Zhang SM
;
Yang H
;
Liang JW
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
Adobe PDF(311Kb)
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View/Download:1725/520
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Submit date:2011/07/05
Nitride Materials
Crystal Growth
Composition Fluctuations
X-ray Diffraction
Layer
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 489, 期号: 2, 页码: 461-464
Authors:
Zhao DG
;
Jiang DS
;
Zhu JJ
;
Wang H
;
Liu ZS
;
Zhang SM
;
Wang YT
;
Jia QJ
;
Yang H
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(418Kb)
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View/Download:1771/452
  |  
Submit date:2010/04/04
Nitride Materials
Crystal Growth
X-ray Diffraction
Time-resolved Photoluminescence
Light-emitting-diodes
Piezoelectric Fields
Laser-diodes
Dependence
Recombination
Polarization
Dynamics
Growth
Mocvd
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films
期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 4, 页码: Art. No. 041901
Authors:
Zhao DG
;
Jiang DS
;
Zhu JJ
;
Liu ZS
;
Wang H
;
Zhang SM
;
Wang YT
;
Yang H
;
Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(203Kb)
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View/Download:1401/438
  |  
Submit date:2010/03/08
Edge Dislocations
Gallium Compounds
Iii-v Semiconductors
Impurities
Photoluminescence
Semiconductor Doping
Semiconductor Thin Films
Silicon
Wide Band Gap Semiconductors
X-ray Diffraction
Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 270, 期号: 3-4, 页码: 316-321
Authors:
Zhang BS
;
Wu M
;
Liu JP
;
Chen J
;
Zhu JJ
;
Shen XM
;
Feng G
;
Zhao DG
;
Wang YT
;
Yang H
;
Boyd AR
;
Zhang, BS, Changchun Univ Sci & Technol, State Key Lab High Power Semicond Lasers, Weixing Rd 7083, Changchun 130022, Peoples R China. 电子邮箱地址: baoshunzhang@126.com
Adobe PDF(264Kb)
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View/Download:1434/552
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Submit date:2010/03/09
X-ray Diffraction
Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique
期刊论文
SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY, 2003, 卷号: 46, 期号: 4, 页码: 437-440
Authors:
Feng G
;
Zhu JJ
;
Shen XM
;
Zhang BS
;
Zhao DG
;
Wang YT
;
Yang H
;
Liang JW
;
Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(184Kb)
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View/Download:1122/441
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Submit date:2010/08/12
Gan
X-ray Diffraction
Thickness
Sapphire
Growth
Films
High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 354-358
Authors:
Feng G
;
Shen XM
;
Zhu JJ
;
Zhang BS
;
Zhao DG
;
Wang YT
;
Yang H
;
Liang JW
;
Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(102Kb)
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View/Download:1993/827
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Submit date:2010/08/12
X-ray Diffraction
Metalorganic Vapor Phase Epitaxy
Nitrides
Semiconducting Iii-v Materials
Buffer Layer
Gan
Growth
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
Authors:
Feng G
;
Zheng XH
;
Fu Y
;
Zhu JJ
;
Shen XM
;
Zhang BS
;
Zhao DG
;
Wang YT
;
Yang H
;
Liang JW
;
Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(120Kb)
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View/Download:1201/332
  |  
Submit date:2010/08/12
X-ray Diffraction
Etching
Metalorganic Vapor-phase Epitaxy
Nitrides
Semiconducting Iii-v Materials
Light-emitting-diodes
Vapor-phase Epitaxy
Films
Dislocations
Density
Growth
Layers