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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [4]
Authors
张书明 [4]
赵德刚 [3]
江德生 [2]
朱建军 [2]
王玉田 [2]
朱继红 [1]
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Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 14, 页码: Art. No. 145410
Authors:
Wang H
;
Jiang DS
;
Zhu JJ
;
Zhao DG
;
Liu ZS
;
Wang YT
;
Zhang SM
;
Yang H
;
Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
Adobe PDF(853Kb)
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Submit date:2010/03/08
Molecular-beam Epitaxy
Phase Epitaxy
Quantum Dots
Band-gap
Growth
Surfaces
Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 7, 页码: Art. No. 075004
Authors:
Wang H
;
Wang LL
;
Sun X
;
Zhu JH
;
Liu WB
;
Jiang DS
;
Zhu JJ
;
Zhao DG
;
Liu ZS
;
Wang YT
;
Zhang SM
;
Yang H
;
Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
Adobe PDF(335Kb)
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View/Download:1037/297
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Submit date:2010/03/08
Electron-transport
Phase Epitaxy
Nitride Inn
Band-gap
Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 235, 期号: 1-4, 页码: 207-211
Authors:
Feng ZH
;
Yang H
;
Zhang SM
;
Duan LH
;
Wang H
;
Wang YT
;
Feng ZH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(161Kb)
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View/Download:1134/289
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Submit date:2010/08/12
Crystal Morphology
Doping
Surface Structure
Metalorgamc Chemical Vapor Deposition
Nitrides
Semiconducting Iii-v Materials
Molecular-beam Epitaxy
Phase Epitaxy
Films
Cathodoluminescence
MOCVD growth of cubic GaN: Materials and devices
会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
Authors:
Yang H
;
Zhang SM
;
Xu DP
;
Li SF
;
Zhao DG
;
Fu Y
;
Sun YP
;
Feng ZH
;
Zheng LX
;
Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(380Kb)
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View/Download:1138/238
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Submit date:2010/10/29
Mocvd
Gan
Ingan
Cubic
Led
Chemical-vapor-deposition
Molecular-beam Epitaxy
Gallium Nitride
Phase Epitaxy
Ingan Films
Electroluminescence
Zincblende
Wurtzite
Mbe