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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [4]
集成光电子学国家重点... [1]
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张书明 [5]
赵德刚 [4]
江德生 [3]
朱建军 [3]
王玉田 [2]
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An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 489, 期号: 2, 页码: 461-464
Authors:
Zhao DG
;
Jiang DS
;
Zhu JJ
;
Wang H
;
Liu ZS
;
Zhang SM
;
Wang YT
;
Jia QJ
;
Yang H
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(418Kb)
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View/Download:1771/452
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Submit date:2010/04/04
Nitride Materials
Crystal Growth
X-ray Diffraction
Time-resolved Photoluminescence
Light-emitting-diodes
Piezoelectric Fields
Laser-diodes
Dependence
Recombination
Polarization
Dynamics
Growth
Mocvd
Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods
期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 2, 页码: Art. No. 026102
Authors:
Sun X
;
Jiang DS
;
Liu WB
;
Zhu JH
;
Wang H
;
Liu ZS
;
Zhu JJ
;
Wang YT
;
Zhao DG
;
Zhang SM
;
You LP
;
Ma RM
;
Yang H
;
Sun X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: xiansun@semi.ac.cn
;
dsjiang@red.semi.ac.cn
Adobe PDF(280Kb)
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View/Download:1278/371
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Submit date:2010/03/08
Light-emitting-diodes
Fundamental-band Gap
Nanowires
Heterostructures
Nanostructures
Mocvd
Polar
Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
Authors:
Zhao DG
;
Jiang DS
;
Zhu JJ
;
Liu ZS
;
Zhang SM
;
Yang H
;
Jahn U
;
Ploog KH
;
Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(447Kb)
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View/Download:1026/318
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Submit date:2010/03/08
Cathodoluminescence
Mocvd
Algan
Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN
期刊论文
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2003, 卷号: 46, 期号: 6, 页码: 620-626
Authors:
Chen J
;
Zhang SM
;
Zhang BS
;
Zhu JJ
;
Feng G
;
Duan LH
;
Wang YT
;
Yang H
;
Zheng WC
;
Chen J,Sichuan Univ,Dept Mat Sci,Chengdu 610064,Peoples R China.
Adobe PDF(301Kb)
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View/Download:1563/630
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Submit date:2010/08/12
Gallium Nitride
Mocvd
In Situ Laser Reflectometry
Chemical-vapor-deposition
In-situ
Sapphire Substrate
Nucleation Layers
Films
MOCVD growth of cubic GaN: Materials and devices
会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
Authors:
Yang H
;
Zhang SM
;
Xu DP
;
Li SF
;
Zhao DG
;
Fu Y
;
Sun YP
;
Feng ZH
;
Zheng LX
;
Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(380Kb)
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View/Download:1138/238
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Submit date:2010/10/29
Mocvd
Gan
Ingan
Cubic
Led
Chemical-vapor-deposition
Molecular-beam Epitaxy
Gallium Nitride
Phase Epitaxy
Ingan Films
Electroluminescence
Zincblende
Wurtzite
Mbe