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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [4]
集成光电子学国家重点... [1]
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张书明 [5]
赵德刚 [4]
江德生 [2]
朱建军 [2]
王玉田 [2]
朱继红 [1]
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An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 489, 期号: 2, 页码: 461-464
Authors:
Zhao DG
;
Jiang DS
;
Zhu JJ
;
Wang H
;
Liu ZS
;
Zhang SM
;
Wang YT
;
Jia QJ
;
Yang H
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(418Kb)
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View/Download:1771/452
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Submit date:2010/04/04
Nitride Materials
Crystal Growth
X-ray Diffraction
Time-resolved Photoluminescence
Light-emitting-diodes
Piezoelectric Fields
Laser-diodes
Dependence
Recombination
Polarization
Dynamics
Growth
Mocvd
Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods
期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 2, 页码: Art. No. 026102
Authors:
Sun X
;
Jiang DS
;
Liu WB
;
Zhu JH
;
Wang H
;
Liu ZS
;
Zhu JJ
;
Wang YT
;
Zhao DG
;
Zhang SM
;
You LP
;
Ma RM
;
Yang H
;
Sun X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: xiansun@semi.ac.cn
;
dsjiang@red.semi.ac.cn
Adobe PDF(280Kb)
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View/Download:1278/371
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Submit date:2010/03/08
Light-emitting-diodes
Fundamental-band Gap
Nanowires
Heterostructures
Nanostructures
Mocvd
Polar
Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
Authors:
Chen J
;
Zhang SM
;
Zhang BS
;
Zhu JJ
;
Shen XM
;
Feng G
;
Liu JP
;
Wang YT
;
Yang H
;
Zheng WC
;
Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(396Kb)
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View/Download:1061/349
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Submit date:2010/08/12
In Situ Laser Reflectometry
Lateral Overgrowths
Surface Morphology
Metalorganic Chemical Vapor Deposition
Gan
Chemical-vapor-deposition
Light-emitting-diodes
Sapphire Substrate
Nucleation Layers
Quality
Temperature
Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate
期刊论文
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2002, 卷号: 45, 期号: 3, 页码: 255-260
Authors:
Sun YP
;
Fu Y
;
Qu B
;
Wang YT
;
Feng ZH
;
Shen XM
;
Zhao DG
;
Zheng XH
;
Duan LH
;
Li BC
;
Zhang SM
;
Yang H
;
Sun YP,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China. 电子邮箱地址: ypsun@red.semi.ac.cn
Adobe PDF(721Kb)
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View/Download:1494/382
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Submit date:2010/08/12
Wafer Bonding
Cubic
Gan/gaas(001)
Si-substrate
Light-emitting-diodes
P-type Gan
Resistance
Contact
Laser
Investigation on the origin of wurtzite domains in thick cubic GaN using reactive ion etching
期刊论文
THIN SOLID FILMS, 2000, 卷号: 372, 期号: 1-2, 页码: 25-29
Authors:
Xu D
;
Yang H
;
Zhang SM
;
Zheng LX
;
Zhao DG
;
Li SF
;
Wang YT
;
Wu RH
;
Xu D,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(193Kb)
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View/Download:916/312
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Submit date:2010/08/12
Molecular-beam Epitaxy
Light-emitting-diodes
Yellow Luminescence
Growth
Heterostructure
Nitride