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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [3]
集成光电子学国家重点... [1]
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张书明 [4]
江德生 [3]
朱建军 [3]
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Optical properties of InN rods on sapphire grown by metal-organic chemical vapor deposition
期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 卷号: 43, 期号: 1, 页码: 138-141
Authors:
Sun YP
;
Cho YH
;
Dai ZH
;
Wang WT
;
Wang H
;
Wang LL
;
Zhang SM
;
Yang H
;
Sun, YP, Yantai Univ, Inst Sci & Technol Optoelect Informat, Yantai 264005, Peoples R China. ypsun@ytu.edu.cn
Adobe PDF(656Kb)
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View/Download:973/296
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Submit date:2011/07/05
Band-gap
Indium Nitride
Transport
Emission
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 14, 页码: Art. No. 145410
Authors:
Wang H
;
Jiang DS
;
Zhu JJ
;
Zhao DG
;
Liu ZS
;
Wang YT
;
Zhang SM
;
Yang H
;
Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
Adobe PDF(853Kb)
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View/Download:1288/426
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Submit date:2010/03/08
Molecular-beam Epitaxy
Phase Epitaxy
Quantum Dots
Band-gap
Growth
Surfaces
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 5, 页码: Art. No. 055001
Authors:
Wang H
;
Jiang DS
;
Zhu JJ
;
Zhao DG
;
Liu ZS
;
Wang YT
;
Zhang SM
;
Yang H
;
Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
Adobe PDF(957Kb)
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View/Download:1048/234
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Submit date:2010/03/08
Molecular-beam Epitaxy
Electron-transport
Band-gap
Films
Sapphire
Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 7, 页码: Art. No. 075004
Authors:
Wang H
;
Wang LL
;
Sun X
;
Zhu JH
;
Liu WB
;
Jiang DS
;
Zhu JJ
;
Zhao DG
;
Liu ZS
;
Wang YT
;
Zhang SM
;
Yang H
;
Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
Adobe PDF(335Kb)
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View/Download:1037/297
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Submit date:2010/03/08
Electron-transport
Phase Epitaxy
Nitride Inn
Band-gap