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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [5]
中科院半导体材料科学... [1]
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金鹏 [6]
徐波 [6]
叶小玲 [5]
李成明 [3]
黎大兵 [1]
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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 572-575
Authors:
Zhou HY
;
Qu SC
;
Jin P
;
Xu B
;
Ye XL
;
Liu JP
;
Wang ZG
;
Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
Adobe PDF(584Kb)
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View/Download:1583/365
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Submit date:2011/07/05
Atom Force Microscopy
Nanostructures
Molecular-beam Epitaxy
Nanomaterials
Semiconducting Gallium Arsenide
Quantum-dots
Anodic Alumina
Arrays
Placement
Inas
Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots
期刊论文
SOLID STATE COMMUNICATIONS, 2006, 卷号: 137, 期号: 11, 页码: 606-610
Authors:
Lei W
;
Chen YH
;
Xu B
;
Jin P
;
Wang YL
;
Zhao C
;
Wang ZG
;
Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: ahleiwen@red.semi.ac.cn
Adobe PDF(349Kb)
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View/Download:1090/353
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Submit date:2010/04/11
Nanostructures
Semiconductors
Optical Properties
Luminescence
Wavelength
Nanostructures
Interband
Lasers
Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP(001)
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 273, 期号: 3-4, 页码: 494-499
Authors:
Zhao FA
;
Chen YH
;
Ye XL
;
Xu B
;
Jin P
;
Wu J
;
Wang ZG
;
Zhang CL
;
Zhao, FA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaofa@red.semi.ac.cn
Adobe PDF(369Kb)
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View/Download:1168/262
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Submit date:2010/03/17
Nanostructures
The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 253, 期号: 1-4, 页码: 59-63
Authors:
Zhang ZY
;
Jin P
;
Li CM
;
Ye XL
;
Meng XQ
;
Xu B
;
Liu FQ
;
Wang ZG
;
Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(182Kb)
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View/Download:1195/327
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Submit date:2010/08/12
Low Dimensional Structures
Nanostructures
Quantum Dots
Molecular Beam Epitaxy
Semiconducting Iii-v Materials
Laser Diode
Time-resolved Photoluminescence
Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer
期刊论文
SOLID STATE COMMUNICATIONS, 2003, 卷号: 126, 期号: 7, 页码: 391-394
Authors:
Zhang ZY
;
Yang CL
;
Wei YQ
;
Ye XL
;
Jin P
;
Li CM
;
Meng XQ
;
Xu B
;
Wang ZG
;
Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(152Kb)
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View/Download:1125/303
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Submit date:2010/08/12
Nanostructures
Semiconductors
Optical Properties
Epitaxy
Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 241, 期号: 3, 页码: 304-308
Authors:
Zhang ZY
;
Xu B
;
Jin P
;
Meng XQ
;
Li CM
;
Ye XL
;
Li DB
;
Wang ZG
;
Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(142Kb)
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View/Download:935/340
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Submit date:2010/08/12
Atomic Force Microscopy
Low Dimensional Structures
Nanostructures
Molecular Beam Epitaxy
Semiconducting Iii-v Materials
Laser Diodes
Temperature-dependence
Threshold Current
Mu-m
Lasers