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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 572-575
Authors:
Zhou HY
;
Qu SC
;
Jin P
;
Xu B
;
Ye XL
;
Liu JP
;
Wang ZG
;
Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
Adobe PDF(584Kb)
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View/Download:1581/365
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Submit date:2011/07/05
Atom Force Microscopy
Nanostructures
Molecular-beam Epitaxy
Nanomaterials
Semiconducting Gallium Arsenide
Quantum-dots
Anodic Alumina
Arrays
Placement
Inas
Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures
期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 2, 页码: Article no.27801
Authors:
Yang XR
;
Xu B
;
Wang HF
;
Zhao GQ
;
Shi SH
;
Shen XZ
;
Li JF
;
Wang ZG
;
Yang, XR, Handan Coll, Dept Phys & Elect Engn, Handan 056005, Peoples R China. yangxr1976@126.com
Adobe PDF(483Kb)
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View/Download:1541/327
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Submit date:2011/07/05
Continuous-wave Operation
Emission
Lasers
Wavelength
Excitons
Energy
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:
Zhou XL
;
Chen YH
;
Zhang HY
;
Zhou GY
;
Li TF
;
Liu JQ
;
Ye XL
;
Xu B
;
Wang ZG
;
Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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View/Download:1604/395
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Submit date:2011/07/05
Inas Islands
Mu-m
Escape
Gaas
Gaas(100)
Substrate
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.94311
Authors:
Zhou XL
;
Chen YH
;
Li TF
;
Zhou GY
;
Zhang HY
;
Ye XL
;
Xu B
;
Wang ZG
;
Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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View/Download:1415/281
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Submit date:2011/07/05
Self-organized Islands
Molecular-beam-epitaxy
Optical-properties
Surfaces
Emission
Density
Size
二维GaAs基光子晶体微腔的制作与光谱特性分析
期刊论文
物理学报, 2010, 卷号: 59, 期号: 10, 页码: 7073-7077
Authors:
彭银生
;
叶小玲
;
徐波
;
牛洁斌
;
贾锐
;
王占国
;
梁松
;
杨晓红
Adobe PDF(889Kb)
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View/Download:1094/194
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Submit date:2011/08/16
Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals
期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 1, 页码: 012003-1-012003-5
Authors:
Peng Yinsheng
;
Ye Xiaoling
;
Xu Bo
;
Jin Peng
;
Niu Jiebin
;
Jia Rui
;
Wang Zhanguo
Adobe PDF(351Kb)
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View/Download:1360/311
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Submit date:2011/08/16
Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry
期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 10, 页码: Art. No. 103108
Authors:
Tang CG
;
Chen YH
;
Xu B
;
Ye XL
;
Wang ZG
;
Chen YH Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: yhchen@red.semi.ac.cn
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View/Download:1559/437
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Submit date:2010/03/08
Aluminium Compounds
Gallium Arsenide
Iii-v Semiconductors
Internal Stresses
Reflectivity
Semiconductor Heterojunctions
Semiconductor Quantum Wells
Morphology and wetting layer properties of InAs/GaAs nanostructures
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Gyeongju, SOUTH KOREA, MAY 11-16, 2008
Authors:
Zhao C
;
Chen YH
;
Xu B
;
Tang CG
;
Wang ZG
;
Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(334Kb)
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View/Download:1417/335
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Submit date:2010/03/09
Molecular-beam Epitaxy
Influence of a tilted cavity on quantum-dot optoelectronic active devices
期刊论文
半导体学报, 2009, 卷号: 30, 期号: 9, 页码: 37-40
Authors:
Liu Wanglai
;
Xu Bo
;
Liang Ping
;
Hu Ying
;
Sun Hong
;
Lü Xueqin
;
Wang Zhanguo
Adobe PDF(461Kb)
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View/Download:1019/287
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Submit date:2010/11/23
以二氧化硅为掩模定位生长量子点的方法
专利
专利类型: 发明, 申请日期: 2008-12-03, 公开日期: 2009-06-04, 2009-06-11
Inventors:
任芸芸
;
徐波
;
周惠英
;
刘明
;
李志刚
;
王占国
Adobe PDF(298Kb)
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Submit date:2009/06/11