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Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 073101
Authors:  Panpan Li;  Hongjian Li;  Zhi Li;  Junjie Kang;  Xiaoyan Yi;  Jinmin Li;  Guohong Wang
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Optical properties of magnesium doped AlxGa1-xN (0.61 <= x <= 0.73) 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 14, 页码: 143103
Authors:  Feneberg, M;  Osterburg, S;  Romero, MF;  Garke, B;  Goldhahn, R;  Neumann, MD;  Esser, N;  Yan, JC;  Zeng, JP;  Wang, JX;  Li, JM
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Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 12, 页码: 123101
Authors:  Wu, K;  Wei, TB;  Zheng, HY;  Lan, D;  Wei, XC;  Hu, Q;  Lu, HX;  Wang, JX;  Luo, Y;  Li, JM
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Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 8, 页码: 083112
Authors:  Li, Z;  Kang, JJ;  Wang, BW;  Li, HJ;  Weng, YH;  Lee, YC;  Liu, ZQ;  Yi, XY;  Feng, ZC;  Wang, GH
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Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 19, 页码: 194301
Authors:  Zhang, Yonghui;  Wei, Tongbo;  Xiong, Zhuo;  Chen, Yu;  Zhen, Aigong;  Shan, Liang;  Zhao, Yun;  Hu, Qiang;  Li, Jinmin;  Wang, Junxi
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Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes 期刊论文
JOURNAL OF APPLIED PHYSICS, 2013, 卷号: 113, 期号: 1, 页码: 014502
Authors:  Zhang, Yiyun;  Guo, Enqing;  Cheng, Yan;  Ma, Jun;  Wang, Liancheng;  Liu, Zhiqiang;  Yi, Xiaoyan;  Wang, Guohong;  Li, Jinmin
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Annealed InGaN green light-emitting diodes with graphene transparent conductive electrodes 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 111, 期号: 11, 页码: 114501
Authors:  Zhang, YY;  Wang, LC;  Li, X;  Yi, XY;  Zhang, N;  Li, J;  Zhu, HW;  Wang, GH
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Electrical and magnetic properties of Ga(1-x)Gd(x)N grown by metal organic chemical vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 8, 页码: 83920
Authors:  Gupta, S;  Zaidi, T;  Melton, A;  Malguth, E;  Yu, HB;  Liu, ZQ;  Liu, XT;  Schwartz, J;  Ferguson, IT;  Ferguson, IT (reprint author), Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA,ianf@uncc.edu
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Ferromagnetic Properties  Semiconductors  Gan  Gagdn