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Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2, KANAZAWA, JAPAN, MAY 27-31, 2001
作者:  Niu ZC;  Wang XD;  Miao ZH;  Lan Q;  Kong YC;  Zhou DY;  Feng SL;  Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载:1251/0  |  提交时间:2010/10/29
Molecular Beam Epitaxy  Ingaas Islands  Photolumineseence  Line-width  1.3 Mu-m  Inas/gaas Quantum Dots  Optical-properties  Cap Layer  Gaas  Luminescence  Strain  
Phase character of the electron transport through a double quantum dot in a mesoscopic ring 会议论文
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 87, OSAKA, JAPAN, SEP 17-22, 2000
作者:  You JQ;  Zheng HZ;  You JQ Chinese Acad Sci Inst Semicond Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载:765/0  |  提交时间:2010/10/29
Observation of the resonant Raman behavior of individual single-walled carbon nanotubes 会议论文
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 87, OSAKA, JAPAN, SEP 17-22, 2000
作者:  Tan PH;  Tang Y;  Hu CY;  Li F;  Bai S;  Cheng HM;  You JQ;  Tan PH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
收藏  |  浏览/下载:1228/0  |  提交时间:2010/10/29
Electric-arc Technique  Large-scale  Scattering  Spectra  Stokes  Modes  
Analog computation using quantum-dot cell network 会议论文
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40 (4B), SENDAI, JAPAN, AUG 29-31, 1999
作者:  Wu NJ;  Saito K;  Yasunaga H;  Wu NJ Univ Aizu Fukushima 9658580 Japan.
Adobe PDF(698Kb)  |  收藏  |  浏览/下载:1017/234  |  提交时间:2010/11/15
Quantum computing 会议论文
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 98 (21), IRVINE, CALIFORNIA, OCT 20-22, 2000
作者:  Li SS;  Long GL;  Bai FS;  Feng SL;  Zheng HZ;  Li SS Chinese Acad Sci Inst Semicond Natl Lab Superlattics & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(58Kb)  |  收藏  |  浏览/下载:1311/192  |  提交时间:2010/11/15
Search Algorithm  
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Niu ZC;  Wang XD;  Miao ZH;  Feng SL;  Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(171Kb)  |  收藏  |  浏览/下载:1187/221  |  提交时间:2010/11/15
Crystal Morphology  Quantum Dots  Molecular Beam Epitaxy  Semiconducting Gallium Arsenide  Semiconducting Indium Gallium Arsenide  1.35 Mu-m  Gaas-surfaces  Photoluminescence  Islands  
Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223 (1), SAPPORO, JAPAN, SEP 24-28, 2000
作者:  Li GH;  Chen Y;  Fung ZL;  Ding K;  Han HX;  Zhou W;  Wang ZG;  Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(165Kb)  |  收藏  |  浏览/下载:1290/322  |  提交时间:2010/11/15
Hydrostatic-pressure  Photoluminescence  Gaas  Luminescence  Growth  Insb  Gasb  
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun BQ;  Jiang DS;  Pan Z;  Li LH;  Wu RH;  Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(112Kb)  |  收藏  |  浏览/下载:1153/261  |  提交时间:2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Semiconducting Iiiv Materials  Luminescence  Gaasn