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Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 10, 页码: Art.No.107803
Authors:  Ma SS (Ma Shan-Shan);  Wang, BR (Wang Bao-Rui);  Sun BQ (Sun Bao-Quan);  Wu DH (Wu Dong-Hai);  Ni HQ (Ni Hai-Qiao);  Niu ZC (Niu Zhi-Chuan);  Ma, SS, Chinese Acad Sci, SKLSM, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Molecular-beam Epitaxy  
Two-photon excited fluorescence from CdSe quantum dots on SiN photonic crystals 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 22, 页码: Art.No.221113
Authors:  Xu XS (Xu Xingsheng);  Yamada T (Yamada Toshiki);  Ueda R (Ueda Rieko);  Otomo A (Otomo Akira);  Xu, XS, Natl Inst Informat & Commun Technol, Kobe Adv ICT Ctr, Nishi Ku, 588-2 Iwaoka, Kobe, Hyogo 6512492, Japan. 电子邮箱地址:
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Cadmium Compounds  
Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 12, 页码: Art. No. 123705
Authors:  Chen J;  Fan WJ;  Xu Q;  Zhang XW;  Li SS;  Xia JB;  Chen J Nanyang Technol Univ Sch Elect & Elect Engn Singapore 639798 Singapore. E-mail Address:
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Emission  Spectra  Lasers  8-band  
Optical properties of aluminum-, gallium-, and indium-doped Bi4Ti3O12 thin films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 11, 页码: Art. No. 113108
Authors:  Jia CH;  Chen YH;  Zhang WF;  Zhang WF Henan Univ Key Lab Photovolta Mat Henan Prov Kaifeng 475004 Peoples R China. E-mail Address:
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Pulsed-laser Deposition  Ferroelectric Properties  Electrical-properties  Structural-properties  Substrate  
The bipolar doping of ZnS via native defects and external dopants 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 11, 页码: Art. No. 113704
Authors:  Gai YQ;  Li JB;  Yao B;  Xia JB;  Gai YQ Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Augmented-wave Method  P-type Zno  Point-defects  Ii-vi  Nitrogen  Semiconductors  1st-principles  Compensation  Enhancement  
MODERN PHYSICS LETTERS B, 2009, 卷号: 23, 期号: 15, 页码: 1881-1887
Authors:  Zhang B;  Chen J;  Wang X;  Wu AM;  Luo JX;  Zhang MA;  Wu YX;  Zhu JJ;  Yang H;  Zhang B Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China. E-mail Address:
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Gan  Epitaxial Lateral Overgrowth  
The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 23, 页码: Art.No.235104
Authors:  Zhu, JH (Zhu, J. H.);  Wang, LJ (Wang, L. J.);  Zhang, SM (Zhang, S. M.);  Wang, H (Wang, H.);  Zhao, DG (Zhao, D. G.);  Zhu, JJ (Zhu, J. J.);  Liu, ZS (Liu, Z. S.);  Jiang, DS (Jiang, D. S.);  Qiu, YX (Qiu, Y. X.);  Yang, H (Yang, H.);  Zhu, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Multiple-quantum Wells  
Spin dynamics of electrons in the first excited subband of a high-mobility low-density two-dimensional electron system 期刊论文
PHYSICAL REVIEW B, 2009, 卷号: 80, 期号: 19, 页码: Art.No.193301
Authors:  Luo HH (Luo Haihui);  Qian X (Qian Xuan);  Ruan XZ (Ruan Xuezhong);  Ji Y (Ji Yang);  Umansky V (Umansky Vladimir);  Ji, Y, Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China. 电子邮箱地址:
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Aluminium Compounds  
Resonant tunneling through S- and U-shaped graphene nanoribbons 期刊论文
NANOTECHNOLOGY, 2009, 卷号: 20, 期号: 41, 页码: Art. No. 415203
Authors:  Zhang ZZ;  Wu ZH;  Chang K;  Peeters FM;  Zhang ZZ Chinese Acad Sci Inst Semicond SKLSM POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Conductance  Voltage  Ribbons  
Electronic structures and mechanical properties of uranium monocarbide from first-principles LDA plus U and GGA plus U calculations 期刊论文
PHYSICS LETTERS A, 2009, 卷号: 373, 期号: 39, 页码: 3577-3581
Authors:  Shi HL;  Zhang P;  Li SS;  Sun B;  Wang BT;  Zhang P Inst Appl Phys & Computat Math LCP POB 8009 Beijing 100088 Peoples R China. E-mail Address:
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First-principle Calculation  Lda Plus u  Gga Plus u  Elastic Constants  Phonon Dispersion