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Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
Authors:  Pan X;  Wang XL;  Xiao HL;  Wang CM;  Yang CB;  Li W;  Wang WY;  Jin P;  Wang ZG
Adobe PDF(549Kb)  |  Favorite  |  View/Download:1410/460  |  Submit date:2011/07/07
Photoluminescence  Raman Scattering  Pulsed Atomic Layer Epitaxy  Algan Alloys