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p型GaN的掺杂研究 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 3, 页码: 508-512
Authors:  金瑞琴;  朱建军;  赵德刚;  刘建平;  张纪才;  杨辉
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GaN生长速率的研究 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 4, 页码: 726-729
Authors:  金瑞琴;  赵德刚;  刘建平;  张纪才;  杨辉
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Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 260, 期号: 3-4, 页码: 331-335
Authors:  Wu M;  Zhang BS;  Chen J;  Liu JP;  Shen XM;  Zhao DG;  Zhang JC;  Wang JF;  Li N;  Jin RQ;  Zhu JJ;  Yang H;  Wu, M, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
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Full-width At Half-maximum  
The influence of AlN buffer layer thickness on the properties of GaN epilayer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 268, 期号: 1-2, 页码: 24-29
Authors:  Zhang JC;  Zhao DG;  Wang JF;  Wang YT;  Chen J;  Liu JP;  Yang H;  Zhang, JC, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jczhang@red.semi.ac.cn
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Buffer Layer