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Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si delta-doped on the barriers 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 7, 页码: 4143-4147
Authors:  Zhou WZ (Zhou Wen-Zheng);  Lin T (Lin Tie);  Shang LY (Shang Li-Yan);  Huang ZM (Huang Zhi-Ming);  Zhu B (Zhu Bo);  Cui LJ (Cui Li-Jie);  Gao HL (Gao Hong-Ling);  Li DL (Li Dong-Lin);  Guo SL (Guo Shao-Ling);  Gui YS (Gui Yong-Sheng);  Chu JH (Chu Jun-Hao);  Zhou, WZ, Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China. 电子邮箱地址: jhchu@mail.sitp.ac.cn
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Sdh Oscillation  
Magneto-transport characteristics of two-dimensional electron gas for Si delta-doped InAlAs/InGaAs single quantum well 期刊论文
ACTA PHYSICA SINICA, 2006, 卷号: 55, 期号: 4, 页码: 2044-2048
Authors:  Zhou WZ;  Yao W;  Zhu B;  Qiu ZJ;  Guo SL;  Lin T;  Cui LJ;  Gui YS;  Chu JH;  Zhou, WZ, Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China. E-mail: zhouwz@mail.sitp.ac.cn
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Inalas/ingaas Single Quantum Well  Sdh Oscillation  Two-dimensional Electron Gas  Magneto-intersubband Scattenng  Alloy Scattering  Heterojunctions  Hemts  Oscillations  Transport  
The microstructure of hydrogenated microcrystalline silicon thin films studied by small-angle x-ray scattering 期刊论文
ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 5, 页码: 2172-2175
Authors:  Zhou BQ;  Liu FZ;  Zhu MF;  Gu JH;  Zhou YQ;  Liu JL;  Dong BZ;  Li GH;  Ding K;  Zhou, BQ, Chinese Acad Sci, Grad Sch, Dept Phys, Beijing 100039, Peoples R China. 电子邮箱地址: zhoubq@mails.gscas.ac.cn
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Hydrogenated Microcrystalline Silicon Thin Film  
Study on growth mechanism of low-temperature prepared microcrystalline Si thin films 期刊论文
ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 4, 页码: 1890-1894
Authors:  Gu, JH;  Zhou, YQ;  Zhu, MF;  Li, GH;  Kun, D;  Zhou, BQ;  Liu, FZ;  Liu, JL;  Zhang, QF;  Zhou, YQ, Chinese Acad Sci, Grad Sch, Dept Phys, Beijing 100049, Peoples R China. 电子邮箱地址: yqzhou@gscas.ac.cn
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Growth Mechanism  
Electron transport properties of MM-HEMT with varied channel indium contents 期刊论文
ACTA PHYSICA SINICA, 2003, 卷号: 52, 期号: 11, 页码: 2879-2882
Authors:  Qiu ZJ;  Jiang CP;  Gui YS;  Shu XZ;  Guo SL;  Chu JH;  Cui LJ;  Zeng YP;  Zhu ZP;  Wang BQ;  Qiu ZJ,Chinese Acad Sci,Shanghai Inst Tech Phys,State Key Lab Infrared Phys,Shanghai 200083,Peoples R China.
Adobe PDF(169Kb)  |  Favorite  |  View/Download:1010/310  |  Submit date:2010/08/12
Mm-hemt  Shubnikov-de Hass Oscillation  Mobility Transistors  Alloy Scattering  High-performance  Gaas