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Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2014, 卷号: 9, 页码: 470
Authors:  Sang, L;  Zhu, QS;  Yang, SY;  Liu, GP;  Li, HJ;  Wei, HY;  Jiao, CM;  Liu, SM;  Wang, ZG;  Zhou, XW;  Mao, W;  Hao, Y;  Shen, B
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Valence band offset of beta-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 562
Authors:  Wei W (Wei, Wei);  Qin ZX (Qin, Zhixin);  Fan SF (Fan, Shunfei);  Li ZW (Li, Zhiwei);  Shi K (Shi, Kai);  Zhu QS (Zhu, Qinsheng);  Zhang GY (Zhang, Guoyi)
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.69
Authors:  Liu JM;  Liu XL;  Li CM;  Wei HY;  Guo Y;  Jiao CM;  Li ZW;  Xu XQ;  Song HP;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL;  Yang TY;  Wang HH;  Liu, JM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. liujianming@semi.ac.cn;  xlliu@semi.ac.cn
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Cathodoluminescence Characterization  Gallium Nitride  Stresses  Layers  Heterostructure  Deposition  Constants  Mechanism  Sapphire  Strain  
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.50
Authors:  Shi K;  Li DB;  Song HP;  Guo Y;  Wang J;  Xu XQ;  Liu JM;  Yang AL;  Wei HY;  Zhang B;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  lidb@ciomp.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(343Kb)  |  Favorite  |  View/Download:1814/418  |  Submit date:2011/07/05
Chemical-vapor-deposition  Core-level Photoemission  Sb-doped Sno2  Inn  Growth  Gan  Naxwo3  Alloys  Green  State  
Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343
Authors:  Liu JM (Liu J. M.);  Liu XL (Liu X. L.);  Xu XQ (Xu X. Q.);  Wang J (Wang J.);  Li CM (Li C. M.);  Wei HY (Wei H. Y.);  Yang SY (Yang S. Y.);  Zhu QS (Zhu Q. S.);  Fan YM (Fan Y. M.);  Zhang XW (Zhang X. W.);  Wang ZG (Wang Z. G.)
Adobe PDF(278Kb)  |  Favorite  |  View/Download:1203/348  |  Submit date:2010/08/17
Valence Band Offset  W-inn/h-bn Heterojunction  X-ray Photoelectron Spectroscopy  Conduction Band Offset  Valence Band Offset  Negative Electron-affinity  Indium Nitride  Wurtzite Gan  Surface  Film  Aln  Transport  Emission  Naxwo3  Growth  
Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well 期刊论文
NANOSCALE RESEARCH LETTERS, 2009, 卷号: 4, 期号: 11, 页码: 1315-1318
Authors:  Wang J (Wang Jun);  Li SS (Li Shu-Shen);  Lu YW (Lue Yan-Wu);  Liu XL (Liu Xiang-Lin);  Yang SY (Yang Shao-Yan);  Zhu QS (Zhu Qin-Sheng);  Wang ZG (Wang Zhan-Guo);  Wang, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: junwang07@semi.ac.cn;  xlliu@semi.ac.cn;  qszhu@semi.ac.cn
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Binding Energy