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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [6]
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徐波 [3]
黎大兵 [2]
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2003 [5]
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Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 卷号: 18, 期号: 11, 页码: 955-959
Authors:
Zhang ZC
;
Chen YH
;
Yang SY
;
Zhang FQ
;
Ma BS
;
Xu B
;
Zeng YP
;
Wang ZG
;
Zhang XP
;
Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(389Kb)
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View/Download:1287/418
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Submit date:2010/08/12
Relaxation
Si
Heterostructures
Kinetics
Strain accommodation of 3C-SiC grown on hydrogen-implanted Si (001) substrate
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 257, 期号: 3-4, 页码: 321-325
Authors:
Zhang ZC
;
Chen YH
;
Li DB
;
Zhang FQ
;
Yang SY
;
Ma BS
;
Sun GS
;
Wang ZG
;
Zhang XP
;
Zhang ZC,Chinese Acad Sci,Lab Semicond Mat Sci,Inst Semicond,Beijing 100083,Peoples R China.
Adobe PDF(332Kb)
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View/Download:1080/371
  |  
Submit date:2010/08/12
Substrate
Heteroepitaxy
Low Pressure Chemical Vapor Deposition
Semiconducting Silicon Carbide
Compliant Substrate
Critical Thickness
Silicon
Relaxation
Mechanism
Defects
Layers
In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(001) substrate
期刊论文
APPLIED SURFACE SCIENCE, 2003, 卷号: 217, 期号: 1-4, 页码: 268-274
Authors:
Zhang ZC
;
Yang SY
;
Zhang FQ
;
Xu B
;
Zeng YP
;
Chen YH
;
Wang ZG
;
Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(389Kb)
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View/Download:897/277
  |  
Submit date:2010/08/12
Strain
Dislocation
Interfaces
Molecular Beam Epitaxy
Semiconductor Iii-v Materials
Critical Thickness
Compliant Substrate
Relaxation
Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth
期刊论文
MICROELECTRONIC ENGINEERING, 2003, 卷号: 66, 期号: 1-4, 页码: 504-509
Authors:
Zhang ZC
;
Ren BY
;
Chen YH
;
Yang SY
;
Wang ZG
;
Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(389Kb)
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View/Download:770/203
  |  
Submit date:2010/08/12
Czochralski Method
Growth From Melt
Semiconductor Silicon
Argon Gas Flow
Computer Simulation
Oxygen Content
Furnace Pressure
In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 247, 期号: 1-2, 页码: 126-130
Authors:
Zhang ZC
;
Yang SY
;
Zhang FQ
;
Xu B
;
Zeng YP
;
Chen YH
;
Wang ZG
;
Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(165Kb)
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View/Download:896/340
  |  
Submit date:2010/08/12
Dislocation
Interfaces
Strain
Molecular Beam Epitaxy
Semiconductor Iiiv Materials
Molecular-beam Epitaxy
Surface-morphology
Technology
Gaas(001)
Behavior
Si
Strain relaxation of InP film directly grown on GaAs patterned compliant substrate
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 1, 页码: 71-76
Authors:
Zhang ZC
;
Yang SY
;
Zhang FQ
;
Li DB
;
Chen YH
;
Wang ZG
;
Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(148Kb)
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View/Download:962/372
  |  
Submit date:2010/08/12
Dislocation
Strain
Molecular Beam Epitaxy
Organometallic Vapor Phase Epitaxy
Semiconductor Iii-v Materials
Critical Thickness
Heteroepitaxial Growth
Layers
Oxidation
Epitaxy