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Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 卷号: 18, 期号: 11, 页码: 955-959
Authors:  Zhang ZC;  Chen YH;  Yang SY;  Zhang FQ;  Ma BS;  Xu B;  Zeng YP;  Wang ZG;  Zhang XP;  Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
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Relaxation  Si  Heterostructures  Kinetics  
Strain accommodation of 3C-SiC grown on hydrogen-implanted Si (001) substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 257, 期号: 3-4, 页码: 321-325
Authors:  Zhang ZC;  Chen YH;  Li DB;  Zhang FQ;  Yang SY;  Ma BS;  Sun GS;  Wang ZG;  Zhang XP;  Zhang ZC,Chinese Acad Sci,Lab Semicond Mat Sci,Inst Semicond,Beijing 100083,Peoples R China.
Adobe PDF(332Kb)  |  Favorite  |  View/Download：1080/371  |  Submit date：2010/08/12
Substrate  Heteroepitaxy  Low Pressure Chemical Vapor Deposition  Semiconducting Silicon Carbide  Compliant Substrate  Critical Thickness  Silicon  Relaxation  Mechanism  Defects  Layers  
In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(001) substrate 期刊论文
APPLIED SURFACE SCIENCE, 2003, 卷号: 217, 期号: 1-4, 页码: 268-274
Authors:  Zhang ZC;  Yang SY;  Zhang FQ;  Xu B;  Zeng YP;  Chen YH;  Wang ZG;  Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(389Kb)  |  Favorite  |  View/Download：897/277  |  Submit date：2010/08/12
Strain  Dislocation  Interfaces  Molecular Beam Epitaxy  Semiconductor Iii-v Materials  Critical Thickness  Compliant Substrate  Relaxation  
Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth 期刊论文
MICROELECTRONIC ENGINEERING, 2003, 卷号: 66, 期号: 1-4, 页码: 504-509
Authors:  Zhang ZC;  Ren BY;  Chen YH;  Yang SY;  Wang ZG;  Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(389Kb)  |  Favorite  |  View/Download：770/203  |  Submit date：2010/08/12
Czochralski Method  Growth From Melt  Semiconductor Silicon  Argon Gas Flow  Computer Simulation  Oxygen Content  Furnace Pressure  
In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 247, 期号: 1-2, 页码: 126-130
Authors:  Zhang ZC;  Yang SY;  Zhang FQ;  Xu B;  Zeng YP;  Chen YH;  Wang ZG;  Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(165Kb)  |  Favorite  |  View/Download：896/340  |  Submit date：2010/08/12
Dislocation  Interfaces  Strain  Molecular Beam Epitaxy  Semiconductor Iiiv Materials  Molecular-beam Epitaxy  Surface-morphology  Technology  Gaas(001)  Behavior  Si  
Strain relaxation of InP film directly grown on GaAs patterned compliant substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 1, 页码: 71-76
Authors:  Zhang ZC;  Yang SY;  Zhang FQ;  Li DB;  Chen YH;  Wang ZG;  Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(148Kb)  |  Favorite  |  View/Download：962/372  |  Submit date：2010/08/12
Dislocation  Strain  Molecular Beam Epitaxy  Organometallic Vapor Phase Epitaxy  Semiconductor Iii-v Materials  Critical Thickness  Heteroepitaxial Growth  Layers  Oxidation  Epitaxy