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Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate | |
Zhang ZC; Chen YH; Yang SY; Zhang FQ; Ma BS; Xu B![]() | |
2003 | |
Source Publication | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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ISSN | 0268-1242 |
Volume | 18Issue:11Pages:955-959 |
Abstract | Various low-temperature (LT) ultra-thin buffer layers have been fabricated on the GaAs (001) substrate. The buffer layer is decoupled from the host substrate by introducing low-temperature defects. The 400 nm In0.25Ga0.75As films were grown on these substrates to test the 'compliant' effects of the buffer layers. Atomic force microscopy, photoluminescence, double crystal x-ray diffraction and transmission electron microscopy were used to estimate the quality of the ln(0.25)Ga(0.75)As layer. The measurements indicated that the misfit strains in the epilayer can be accommodated by the LT ultra-thin buffer layer. The strain accommodation effects of the LT defects have been discussed in detail. |
metadata_83 | chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; peking univ, sch phys, electron microscopy lab, beijing 100871, peoples r china |
Keyword | Relaxation Si Heterostructures Kinetics |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2010-08-12 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/11382 |
Collection | 中国科学院半导体研究所(2009年前) |
Corresponding Author | Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China. |
Recommended Citation GB/T 7714 | Zhang ZC,Chen YH,Yang SY,et al. Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2003,18(11):955-959. |
APA | Zhang ZC.,Chen YH.,Yang SY.,Zhang FQ.,Ma BS.,...&Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China..(2003).Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,18(11),955-959. |
MLA | Zhang ZC,et al."Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 18.11(2003):955-959. |
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