Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate

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	Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate
	Zhang ZC; Chen YH; Yang SY; Zhang FQ; Ma BS; Xu B; Zeng YP; Wang ZG; Zhang XP; Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
	2003
Source Publication	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN	0268-1242
Volume	18 Issue:11 Pages:955-959
Abstract	Various low-temperature (LT) ultra-thin buffer layers have been fabricated on the GaAs (001) substrate. The buffer layer is decoupled from the host substrate by introducing low-temperature defects. The 400 nm In0.25Ga0.75As films were grown on these substrates to test the 'compliant' effects of the buffer layers. Atomic force microscopy, photoluminescence, double crystal x-ray diffraction and transmission electron microscopy were used to estimate the quality of the ln(0.25)Ga(0.75)As layer. The measurements indicated that the misfit strains in the epilayer can be accommodated by the LT ultra-thin buffer layer. The strain accommodation effects of the LT defects have been discussed in detail.
metadata_83	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; peking univ, sch phys, electron microscopy lab, beijing 100871, peoples r china
Keyword	Relaxation Si Heterostructures Kinetics
Subject Area	半导体材料
Indexed By	SCI
Language	英语
Date Available	2010-08-12
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/11382
Collection	中国科学院半导体研究所（2009年前）
Corresponding Author	Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Recommended Citation GB/T 7714	Zhang ZC,Chen YH,Yang SY,et al. Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2003,18(11):955-959.
APA	Zhang ZC.,Chen YH.,Yang SY.,Zhang FQ.,Ma BS.,...&Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China..(2003).Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,18(11),955-959.
MLA	Zhang ZC,et al."Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 18.11(2003):955-959.

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