SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate
Zhang ZC; Chen YH; Yang SY; Zhang FQ; Ma BS; Xu B; Zeng YP; Wang ZG; Zhang XP; Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
2003
Source PublicationSEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN0268-1242
Volume18Issue:11Pages:955-959
AbstractVarious low-temperature (LT) ultra-thin buffer layers have been fabricated on the GaAs (001) substrate. The buffer layer is decoupled from the host substrate by introducing low-temperature defects. The 400 nm In0.25Ga0.75As films were grown on these substrates to test the 'compliant' effects of the buffer layers. Atomic force microscopy, photoluminescence, double crystal x-ray diffraction and transmission electron microscopy were used to estimate the quality of the ln(0.25)Ga(0.75)As layer. The measurements indicated that the misfit strains in the epilayer can be accommodated by the LT ultra-thin buffer layer. The strain accommodation effects of the LT defects have been discussed in detail.
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; peking univ, sch phys, electron microscopy lab, beijing 100871, peoples r china
KeywordRelaxation Si Heterostructures Kinetics
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11382
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Zhang ZC,Chen YH,Yang SY,et al. Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2003,18(11):955-959.
APA Zhang ZC.,Chen YH.,Yang SY.,Zhang FQ.,Ma BS.,...&Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China..(2003).Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,18(11),955-959.
MLA Zhang ZC,et al."Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 18.11(2003):955-959.
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