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Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Kong MY;  Zhang JP;  Wang XL;  Sun DZ;  Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(187Kb)  |  收藏  |  浏览/下载：1238/345  |  提交时间：2010/11/15
Impurities  Molecular Beam Epitaxy  Nitrides  Semiconducting Iii-v Materials  Gallium Nitride  Sapphire Substrate  Defects  Heterostructure  Semiconductors  Stress  
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Zhang JP;  Sun DZ;  Li XB;  Wang XL;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Zhang JP Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(127Kb)  |  收藏  |  浏览/下载：1315/307  |  提交时间：2010/11/15
Stress  Growth  
High-concentration hydrogen in unintentionally doped GaN 会议论文
JOURNAL OF CRYSTAL GROWTH, 189, TOKUSHIMA CITY, JAPAN, OCT 27-31, 1997
作者:  Zhang JP;  Wang XL;  Sun DZ;  Li XB;  Kong MY;  Zhang JP Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhangjp@red.semi.ac.cn
Adobe PDF(109Kb)  |  收藏  |  浏览/下载：1160/289  |  提交时间：2010/11/15
Gallium Nitride  Gas Source Molecular Beam Epitaxy  Hydrogen  Autodoping  Films