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连续激射的GaN基激光器研究 学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:  张立群
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Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 2, 页码: Art. No. 023104
Authors:  Zhang LQ;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Zhang SM;  Yang H;  Zhang LQ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address:;
Adobe PDF(937Kb)  |  Favorite  |  View/Download:1437/637  |  Submit date:2010/03/08
Aluminium Compounds  Claddings  Gallium Compounds  Iii-v Semiconductors  Indium Compounds  Quantum Well Lasers  Refractive Index  Waveguide Lasers  
GaN基激光器的特性 期刊论文
红外与激光工程, 2009, 卷号: 38, 期号: 1, 页码: 41-44
Authors:  张立群;  张书明;  江德生;  朱建军;  赵德刚;  杨辉
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GaN-based violet laser diodes grown on free-standing GaN substrate 期刊论文
CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 12, 页码: 5350-5353
Authors:  Zhang LQ;  Zhang SM;  Jiang DS;  Wang H;  Zhu JJ;  Zhao DG;  Liu ZS;  Yang H;  Yang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address:;
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Gan Laser Diode  Mounting Configuration  Active Region Temperature  Continuous-wave Operation