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Amorphous zinc-doped silicon oxide (SZO) resistive switching memory: manipulated bias control from selector to memristor 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2014, 卷号: 2, 期号: 22, 页码: 4401-4405
Authors:  Huang, JS;  Yen, WC;  Lin, SM;  Lee, CY;  Wu, J;  Wang, ZM;  Chin, TS;  Chueh, YL
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Magnetic field controllable nonvolatile resistive switching effect in silicon device 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 24, 页码: 243511
Authors:  Wang, JM;  Zhang, XZ;  Piao, HG;  Luo, ZC;  Xiong, CY;  Wang, XF;  Yang, FH
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