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Amorphous zinc-doped silicon oxide (SZO) resistive switching memory: manipulated bias control from selector to memristor
Huang, JS; Yen, WC; Lin, SM; Lee, CY; Wu, J; Wang, ZM; Chin, TS; Chueh, YL
2014
Source PublicationJOURNAL OF MATERIALS CHEMISTRY C
Volume2Issue:22Pages:4401-4405
Subject Area微电子学
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26323
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Huang, JS,Yen, WC,Lin, SM,et al. Amorphous zinc-doped silicon oxide (SZO) resistive switching memory: manipulated bias control from selector to memristor[J]. JOURNAL OF MATERIALS CHEMISTRY C,2014,2(22):4401-4405.
APA Huang, JS.,Yen, WC.,Lin, SM.,Lee, CY.,Wu, J.,...&Chueh, YL.(2014).Amorphous zinc-doped silicon oxide (SZO) resistive switching memory: manipulated bias control from selector to memristor.JOURNAL OF MATERIALS CHEMISTRY C,2(22),4401-4405.
MLA Huang, JS,et al."Amorphous zinc-doped silicon oxide (SZO) resistive switching memory: manipulated bias control from selector to memristor".JOURNAL OF MATERIALS CHEMISTRY C 2.22(2014):4401-4405.
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