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Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC 期刊论文
Chemical Physics Letters, 2016, 卷号: 651, 页码: 76-79
Authors:  F. Liang;  P. Chen;  D.G. Zhao;  D.S. Jiang;  Z.S. Liu;  J.J. Zhu;  J. Yang;  W. Liu;  X.G. He;  X.J. Li;  X. Li;  S.T. Liu;  H. Yang;  L.Q. Zhang;  J.P. Liu;  Y.T. Zhang;  G.T. Du
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