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Temperature-induced switching-over of the luminescence transitions in GaInNAs/GaAs quantum wells 期刊论文
CHINESE PHYSICS LETTERS, 2004, 卷号: 21, 期号: 3, 页码: 548-551
Authors:  Bian LF;  Jiang D;  Liang XG;  Lu SL;  Bian, LF, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Molecular-beam Epitaxy  
Anomalous temperature dependence of photoluminescence in GaInNAs/GaAs multiple quantum wells 期刊论文
CHINESE PHYSICS LETTERS, 2002, 卷号: 19, 期号: 8, 页码: 1203-1206
Authors:  Liang XG;  Jiang DS;  Bian LF;  Pan Z;  Li LH;  Wu RH;  Liang XG,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(239Kb)  |  Favorite  |  View/Download:953/228  |  Submit date:2010/08/12
Band  Luminescence  Gaas  Localization  Emission  Behavior  Shift  Ingan