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A Self-Aligned Process to Fabricate a Metal Electrode-Quantum Dot/Nanowire-Metal Electrode Structure with 100% Yield 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 9, 页码: 098102
Authors:  Fu YC (Fu Ying-Chun);  Wang XF (Wang Xiao-Feng);  Fan ZC (Fan Zhong-Chao);  Yang X (Yang Xiang);  Bai YX (Bai Yun-Xia);  Zhang JY (Zhang Jia-Yong);  Ma HL (Ma Hui-Li);  Ji A (Ji An);  Yang FH (Yang Fu-Hua)
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Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications 期刊论文
NANOTECHNOLOGY, 2010, 卷号: 21, 期号: 7, 页码: Art. No. 075303
Authors:  Zhang JY;  Wang XF;  Wang XD;  Fan ZC;  Li Y;  Ji A;  Yang FH;  Wang, XF, Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China. E-mail Address: jyzhang08@semi.ac.cn;  wangxiaofeng@semi.ac.cn;  fhyang@red.semi.ac.cn
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Focused-ion-beam  
一种制备低反射率蓝宝石图形衬底的方法 专利
专利类型: 发明, 公开日期: 2014-02-12
Inventors:  黄亚军;  樊中朝;  王莉;  季安
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一种氮化镓异质结肖特基二极管及其制备方法 专利
专利类型: 发明, 公开日期: 2016-09-12
Inventors:  李迪;  贾利芳;  何志;  樊中朝;  杨富华
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一种新型GaN基增强型HEMT器件及其制备方法 专利
专利类型: 发明, 公开日期: 2016-08-30
Inventors:  贾利芳;  何志;  刘志强;  李迪;  樊中朝;  程哲;  梁亚楠;  王晓东;  杨富华
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一种新型GaN基增强型HEMT器件及其制备方法 专利
专利类型: 发明, 公开日期: 2016-08-30
Inventors:  贾利芳;  何志;  刘志强;  李迪;  樊中朝;  程哲;  梁亚楠;  王晓东;  杨富华
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