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Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 12, 页码: 123504
Authors:  Lv YJ;  Lin ZJ;  Meng LG;  Yu YX;  Luan CB;  Cao ZF;  Chen H;  Sun BQ;  Wang ZG;  Lin, ZJ (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China, linzj@sdu.edu.cn
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