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Effects of Rapid Thermal Annealing on OpticalProperties of GaInNAs/ GaAs Single Quantum Well Grown by Plasma- Assisted Molecular Beam Epitaxy 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 10, 页码: 974
Authors:  Zhang W(张伟);  Pan Z(潘钟);  Li LH(李联合);  Wang XY(王学宇);  Lin YW(林耀望)
Adobe PDF(310Kb)  |  Favorite  |  View/Download:906/235  |  Submit date:2010/11/23
Characterization of Ga N_x As_(1 - x) Alloy Grownon Ga As by Molecular Beam Epitaxy 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 3, 页码: 219
Authors:  Li LH(李联合);  Zhang W(张伟);  Pan Z(潘钟);  Lin YW(林耀望);  Wu RH(吴荣汉)
Adobe PDF(339Kb)  |  Favorite  |  View/Download:811/267  |  Submit date:2010/11/23
Effects of Growth Conditions on Optical Properties ofGa In NAs/Ga As Quantum Well Grown by Molecular Beam Epitaxy 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 12, 页码: 1152
Authors:  Li LH(李联合);  Pan Z(潘钟);  Zhang W(张伟);  Lin YW(林耀望);  Wang XY(王学宇);  Wu RH(吴荣汉)
Adobe PDF(315Kb)  |  Favorite  |  View/Download:722/198  |  Submit date:2010/11/23