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Energy band and acceptor binding energy of GaN and AlxGa1-xN 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Xia JB;  Cheah KW;  Wang XL;  Sun DZ;  Kong MY;  Xia JB Hong Kong Bapitst Univ Dept Phys Hong Kong Hong Kong Peoples R China.
Adobe PDF(79Kb)  |  收藏  |  浏览/下载：1410/330  |  提交时间：2010/11/15
Acceptor Binding Energy  Hole Effective-mass Hamiltonian  Wurtzite Gan