Energy band and acceptor binding energy of GaN and AlxGa1-xN

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	Energy band and acceptor binding energy of GaN and AlxGa1-xN
	Xia JB; Cheah KW; Wang XL; Sun DZ; Kong MY; Xia JB Hong Kong Bapitst Univ Dept Phys Hong Kong Hong Kong Peoples R China.
	2000
会议名称	IUMRS International Conference of Advanced Materials
会议录名称	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3)
页码	204-206
会议日期	JUN 13-18, 1999
会议地点	BEIJING, PEOPLES R CHINA
出版地	PO BOX 564, 1001 LAUSANNE, SWITZERLAND
出版者	ELSEVIER SCIENCE SA
ISSN	0921-5107
部门归属	hong kong bapitst univ, dept phys, hong kong, hong kong, peoples r china; chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	The hole effective-mass Hamiltonian for the semiconductors of wurtzite structure is established, and the effective-mass parameters of GaN and AlxGa1-xN are given. Besides the asymmetry in the z and x, y directions, the linear term of the momentum operator in the Hamiltonian is essential in determining the valence band structure, which is different from that of the zinc-blende structure. The binding energies of acceptor states are calculated by solving strictly the effective-mass equations. The binding energies of donor and acceptor for wurtzite GaN are 20 and 131, 97 meV, respectively, which are inconsistent with the recent experimental results. It is proposed that there are two kinds of acceptors in wurtzite GaN. One kind is the general acceptor such as C, substituting N, which satisfies the effective-mass theory, and the other includes Mg, Zn, Cd etc., the binding energy of which deviates from that given by the effective-mass theory. Experimentally, wurtzite GaN was grown by the MBE method, and the PL spectra were measured. Three main peaks are assigned to the DA transitions from the two kinds of acceptor. Some of the transitions were identified as coming from the cubic phase of GaN, which appears randomly within the predominantly hexagonal material. The binding energy of acceptor in ALN is about 239, 158 meV, that in AlxGa1-xN alloys (x approximate to 0.2) is 147, 111 meV, close to that in GaN. (C) 2000 Published by Elsevier Science S.A. All rights reserved.
关键词	Acceptor Binding Energy Hole Effective-mass Hamiltonian Wurtzite Gan
学科领域	半导体材料
主办者	IUMRS.; Amer Xtal Technol.; SUT Associates.; Univ Calif San Diego.; Shanghai Inst Met.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14999
专题	中国科学院半导体研究所（2009年前）
通讯作者	Xia JB Hong Kong Bapitst Univ Dept Phys Hong Kong Hong Kong Peoples R China.
推荐引用方式 GB/T 7714	Xia JB,Cheah KW,Wang XL,et al. Energy band and acceptor binding energy of GaN and AlxGa1-xN[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2000:204-206.

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