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Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Islam MR;  Chen NF;  Yamada M;  Islam, MR, Khulna Univ Engn & Technol, Dept Elect & Elect Engn, Khulna 920300, Bangladesh. 电子邮箱地址: islambit@yahoo.com
Adobe PDF(159Kb)  |  收藏  |  浏览/下载：1196/260  |  提交时间：2010/03/29
Raman Scattering  
Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Miao, ZH (Miao, Zhenhua);  Gong, Z (Gong, Zheng);  Fang, ZD (Fang, Zhidan);  Niu, ZC (Niu, Zhichuan);  Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(378Kb)  |  收藏  |  浏览/下载：1460/291  |  提交时间：2010/03/29
Atomic Hydrogen  Molecular Beam Epitaxy  Step Arrays  Molecular-beam Epitaxy  Atomic-hydrogen  Vicinal Surface  Quantum Dots  Growth  Temperature  Irradiation  Mechanism  Mbe  
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G 会议论文
ICO20 MATERIALS AND NANOSTRUCTURES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:  Shen, WJ;  Duan, Y;  Wang, J;  Wang, QY;  Zeng, YP;  Shen, WJ, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(402Kb)  |  收藏  |  浏览/下载：1676/615  |  提交时间：2010/03/29
Zno  Mocvd  Thermal Annealing  Photoluminescence  X-ray Diffraction  Atomic Force Microscopy  Pulsed-laser Deposition  Thin-films  Photoluminescence  Mechanisms  Epitaxy  Cvd  Si  
Structure and visible luminescence of ZnO nanoparticles 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Peng, WQ (Peng, W. Q.);  Qu, SC (Qu, S. C.);  Cong, GW (Cong, G. W.);  Wang, ZG (Wang, Z. G.);  Peng, WQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wqpeng@semi.ac.cn
Adobe PDF(139Kb)  |  收藏  |  浏览/下载：1869/624  |  提交时间：2010/03/29
Nanoparticles  
Electron irradiation-induced defects in InP pre-annealed at high temperature 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Zhao, YW (Zhao, Y. W.);  Dong, ZY (Dong, Z. Y.);  Deng, AH (Deng, A. H.);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(147Kb)  |  收藏  |  浏览/下载：1192/254  |  提交时间：2010/03/29
Indium Phosphide  
The study of high temperature annealing of a-SiC : H films 会议论文
ADVANCED MATERIALS FORUM III丛书标题: MATERIALS SCIENCE FORUM, Aveiro, PORTUGAL, MAR 20-23, 2005
作者:  Zhang, S;  Hu, Z;  Raniero, L;  Liao, X;  Ferreira, I;  Fortunato, E;  Vilarinho, P;  Perreira, L;  Martins, R;  Zhang, S, Univ Nova Lisboa, Fac Ciencias & Tecnol, Dept Ciencia Mat, Campus Caparica, P-2829516 Caparica, Portugal. 电子邮箱地址: sz@uninova.pt
Adobe PDF(1210Kb)  |  收藏  |  浏览/下载：1438/209  |  提交时间：2010/03/29
Silicon Carbide  High Temperature Annealing  Thin Film  Silicon  Pecvd  
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, Singapore, SINGAPORE, JUL 03-08, 2005
作者:  Jiang, DS;  Qu, YH;  Ni, HQ;  Wu, DH;  Xu, YQ;  Niu, ZC;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(204Kb)  |  收藏  |  浏览/下载：1752/365  |  提交时间：2010/03/29
Molecular Beam Epitaxy