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GaN和GaSb基稀磁半导体、肖特基结的制备及其性质研究 学位论文
, 北京: 中国科学院研究生院, 2015
Authors:  陶东言
Adobe PDF(5924Kb)  |  Favorite  |  View/Download:487/35  |  Submit date:2015/05/29
稀磁半导体  Gan  Gasb  表面钝化  肖特基器件  
Electrical and magnetic properties of Ga(1-x)Gd(x)N grown by metal organic chemical vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 8, 页码: 83920
Authors:  Gupta, S;  Zaidi, T;  Melton, A;  Malguth, E;  Yu, HB;  Liu, ZQ;  Liu, XT;  Schwartz, J;  Ferguson, IT;  Ferguson, IT (reprint author), Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA,ianf@uncc.edu
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Ferromagnetic Properties  Semiconductors  Gan  Gagdn