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Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Wei, XC;  Zhao, YW;  Dong, ZY;  Li, JM;  Wei, XC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(308Kb)  |  收藏  |  浏览/下载：1865/508  |  提交时间：2010/03/09
Zinc Oxide  X-ray Diffraction  Defects  Single Crystal  
Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Wang, XL;  Wang, CM;  Hu, GX;  Wang, JX;  Li, JP;  Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(266Kb)  |  收藏  |  浏览/下载：1863/347  |  提交时间：2010/03/29
Molecular-beam Epitaxy  2-dimensional Electron-gas  Bulk Gan  Optimization  Layers  Hemts  
A novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS:OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Zhang RY;  Dong J;  Zhou F;  Zhu HL;  Shu HY;  Bian J;  Wang LF;  Tian HL;  Wang W;  Zhang RY Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(413Kb)  |  收藏  |  浏览/下载：1300/338  |  提交时间：2010/10/29
Spot-size Converter  Gain  
Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition 会议论文
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188 (2), DENVER, COLORADO, JUL 16-20, 2001
作者:  Sun XL;  Yang H;  Zhu JJ;  Wang YT;  Chen Y;  Li GH;  Wang ZG;  Sun XL Ohio State Univ Dept Elect Engn Columbus OH 43210 USA.
Adobe PDF(110Kb)  |  收藏  |  浏览/下载：1267/285  |  提交时间：2010/11/15
Gallium Nitride  Luminescence  Bulk  
Spin split cyclotron resonance in GaAs quantum wells 会议论文
PHYSICS AND CHEMISTRY OF NANOSTRUCTURED MATERIALS, HONG KONG, PEOPLES R CHINA, JAN, 1999
作者:  Wu XG;  Wu XG Chinese Acad Sci Inst Semicond NLSM Beijing 100864 Peoples R China.
Adobe PDF(2144Kb)  |  收藏  |  浏览/下载：803/95  |  提交时间：2010/10/29
Limit  
Modulation magnesium-doping in AlGaN/GaN superlattices 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Liu XL;  Yuan HR;  Lu DC;  Wang XH;  Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(277Kb)  |  收藏  |  浏览/下载：1021/178  |  提交时间：2010/10/29
Mg-doped  Algan/gan Superlattices  Resistivity  Hole Concentration  Polarization  
The fabrication of thick SiO2 layer by anodization 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Ou HY;  Yang QQ;  Lei HB;  Wang QM;  Hu XW;  Ou HY Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(185Kb)  |  收藏  |  浏览/下载：1303/369  |  提交时间：2010/11/15
Thick Sio2 Layer  Porous Silicon  Sio2/si Waveguide Device  Wave-guides  Silicon  
A model of dislocations at the interface of the bonded wafers 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Han WH;  Yu JZ;  Wang LC;  Wei HZ;  Zhang XF;  Wang QM;  Han WH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(76Kb)  |  收藏  |  浏览/下载：1549/266  |  提交时间：2010/10/29
Wafer Bonding  Heteroepitaxy  Lattice Mismatch  Edge-like Dislocations  Thermal Stress  60 Degrees Dislocation Lines  Gaas  
Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures 会议论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 46 (3), TORONTO, CANADA, NOV 08-14, 1998
作者:  Dezillie B;  Li Z;  Eremin V;  Bruzzi M;  Pirollo S;  Pandey SU;  Li CJ;  Dezillie B Brookhaven Natl Lab Upton NY 11973 USA.
Adobe PDF(790Kb)  |  收藏  |  浏览/下载：1464/308  |  提交时间：2010/11/15
Silicon Detectors  
Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells 会议论文
JOURNAL OF ELECTRONIC MATERIALS, 28 (5), CHARLOTTESVILLE, VIRGINIA, JUN 24-26, 1998
作者:  Yu GH;  Fan XW;  Guan ZP;  Zhang JY;  Zhao XW;  Shen DZ;  Zheng ZH;  Yang BJ;  Jiang DS;  Chen YB;  Zhu ZM;  Yu GH Chinese Acad Sci Lab Excited State Proc Changchun 130021 Peoples R China.
Adobe PDF(134Kb)  |  收藏  |  浏览/下载：1466/239  |  提交时间：2010/11/15
Double Multi-quantum Wells  Photocurrent Spectra  Zncdse-znse  Spectroscopy  Photoluminescence  Heterostructures  Photodetectors