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Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well 会议论文
JOURNAL OF CRYSTAL GROWTH, Singapore, SINGAPORE, JUL 03-08, 2005
作者:  Fan WJ;  Abiyasa AP;  Tan ST;  Yu SF;  Sun XW;  Xia JB;  Yeo YC;  Li MF;  Chong TC;  Fan, WJ, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore. 电子邮箱地址: ewjfan@ntu.edu.sg
Adobe PDF(219Kb)  |  收藏  |  浏览/下载：3010/1041  |  提交时间：2010/03/29
Computer Simulation  
Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:  Kang JY;  Shen YW;  Wang ZG;  Kang JY Xiamen Univ Dept Phys Xiamen 361005 Peoples R China.
Adobe PDF(133Kb)  |  收藏  |  浏览/下载：1219/238  |  提交时间：2010/11/15
Defects  Gan  Photoluminescence  Electronic Structures  Yellow Luminescence  Epitaxial-films  Mg  
Modulation magnesium-doping in AlGaN/GaN superlattices 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Liu XL;  Yuan HR;  Lu DC;  Wang XH;  Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(277Kb)  |  收藏  |  浏览/下载：1041/178  |  提交时间：2010/10/29
Mg-doped  Algan/gan Superlattices  Resistivity  Hole Concentration  Polarization  
Energy band and acceptor binding energy of GaN and AlxGa1-xN 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Xia JB;  Cheah KW;  Wang XL;  Sun DZ;  Kong MY;  Xia JB Hong Kong Bapitst Univ Dept Phys Hong Kong Hong Kong Peoples R China.
Adobe PDF(79Kb)  |  收藏  |  浏览/下载：1446/330  |  提交时间：2010/11/15
Acceptor Binding Energy  Hole Effective-mass Hamiltonian  Wurtzite Gan