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Native oxided AlAs current blocking layer for AIGaInP high brightness light emitting diodes 会议论文
LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS IV, 3938, SAN JOSE, CA, JAN 26-27, 2000
作者:  Wang GH;  Ma XY;  Zhang YF;  Wang ST;  Li YZ;  Chen LH;  Wang GH Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1183/0  |  提交时间：2010/10/29
Native Oxided Alas  Current Blocking Layer  Algainp  High Brightness Light Emitting Diodes  
Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition 会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:  Xu DP;  Yang H;  Li JB;  Li SF;  Zhao DG;  Wang YT;  Sun XL;  Wu RH;  Xu DP Chinese Acad Sci Natl Res Ctr Optoelect Technol Inst Semicond Beijing 100864 Peoples R China.
Adobe PDF(194Kb)  |  收藏  |  浏览/下载：1276/252  |  提交时间：2010/11/15
Cubic Gan  Buffer Layer  Atomic Force Microscopy  Reflection High-energy Electron Diffraction  Movpe  
In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE 会议论文
JOURNAL OF CRYSTAL GROWTH, 221, SAPPORO, JAPAN, JUN 05-09, 2000
作者:  Lu DC;  Wang CX;  Yuan HR;  Liu XL;  Wang XH;  Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat & Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(428Kb)  |  收藏  |  浏览/下载：1485/179  |  提交时间：2010/11/15
Gan  Annealing Treatment  In-doping  Movpe  Photoluminescence  Chemical-vapor-deposition  Phase Epitaxy  Buffer Layer  Films  Sapphire  
The fabrication of thick SiO2 layer by anodization 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Ou HY;  Yang QQ;  Lei HB;  Wang QM;  Hu XW;  Ou HY Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(185Kb)  |  收藏  |  浏览/下载：1424/369  |  提交时间：2010/11/15
Thick Sio2 Layer  Porous Silicon  Sio2/si Waveguide Device  Wave-guides  Silicon