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Optical transitions in GaNAs/GaAs single quantum well 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Luo XD;  Xu ZY;  Sun BQ;  Pan Z;  Li LH;  Lin YW;  Ge WK;  Luo XD Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(314Kb)  |  收藏  |  浏览/下载：1310/244  |  提交时间：2010/10/29
Ganas  Photoluminescence  Band Offset  Band Bowing Coefficient  Localized Exciton  Molecular-beam Epitaxy  Alloys  Temperature  Gaasn  
Epitaxial growth of GaNAs/GaAs heterostructure materials 会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:  Lin YW;  Pan Z;  Li LH;  Zhou ZQ;  Wang H;  Zhang W;  Lin YW Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(195Kb)  |  收藏  |  浏览/下载：1613/289  |  提交时间：2010/11/15
Ganas  Dc Active N-2 Plasma  Molecular Beam Epitaxy  Nitrogen Content  Fourier Transform Infrared Spectroscopy Of Intensity  Band-gap Energy  Gaas1-xnx  Nitrogen  
Methods to tune the electronic states of self-organized InAs/GaAs quantum dots 会议论文
PHYSICA B-CONDENSED MATTER, 279 (1-3), HONG KONG, HONG KONG, JUN 21-25, 1999
作者:  Wang H;  Niu ZC;  Zhu HJ;  Wang ZM;  Jiang DS;  Feng SL;  Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(119Kb)  |  收藏  |  浏览/下载：1425/261  |  提交时间：2010/11/15
Quantum Dot  Growth Interruption  Quantum Dot Laser