Epitaxial growth of GaNAs/GaAs heterostructure materials

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Epitaxial growth of GaNAs/GaAs heterostructure materials
	Lin YW; Pan Z; Li LH; Zhou ZQ; Wang H; Zhang W; Lin YW Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	1st Asian Conference on Chemical Vapour Deposition
会议录名称	THIN SOLID FILMS, 368 (2)
页码	249-252
会议日期	MAY 10-13, 1999
会议地点	SHANGHAI, PEOPLES R CHINA
出版地	PO BOX 564, 1001 LAUSANNE, SWITZERLAND
出版者	ELSEVIER SCIENCE SA
ISSN	0040-6090
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	A series of systematic experiments on the growth of high quality GaNAs strained layers on GaAs (001) substrate have been carried out by using DC active Nz plasma, assisted molecular beam epitaxy. The samples of GaNAs between 3 and 200 nm thick were evaluated by double crystal X-ray diffraction (XRD) and photoluminescence (PL) measurements. PL and XRD measurements for these samples are in good agreement. Some material growth and structure parameters affecting the properties of GaNAs/GaAs heterostructure were studied; they were: (1) growth temperature of GaNAs epilayer; (2) electrical current of active N-2 plasma; (3) Nz flow rate; (4) GaNAs growth rate; (5) the thickness of GaNAs strained layer. XRD and PL measurements showed that superlattice with distinct satellite peaks up to two orders and quantum well structure with intensity at 22 meV Fourier transform infrared spectroscopy (FWHM) can be achieved in molecular beam epitaxy (MBE) system. (C) 2000 Published by Elsevier Science S.A. All rights reserved.
关键词	Ganas Dc Active N-2 Plasma Molecular Beam Epitaxy Nitrogen Content Fourier Transform Infrared Spectroscopy Of Intensity Band-gap Energy Gaas1-xnx Nitrogen
学科领域	半导体材料
主办者	Chinese Vacuum Soc, Thin Films Comm.; Chinese Electr Soc, Thin Films Comm.; Nat Sci Fdn.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14979
专题	中国科学院半导体研究所（2009年前）
通讯作者	Lin YW Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Lin YW,Pan Z,Li LH,et al. Epitaxial growth of GaNAs/GaAs heterostructure materials[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2000:249-252.

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