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The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Wang LS;  Liu XL;  Zan YD;  Wang D;  Lu DC;  Wang ZG;  Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：926/0  |  提交时间：2010/10/29
Sapphire  
Improvement of CMOS SOS devices characteristics by a modified solid phase epitaxy 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Liu ZL;  He ZJ;  Yu F;  Nie JP;  Yu YH;  Liu ZL Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(194Kb)  |  收藏  |  浏览/下载：1539/356  |  提交时间：2010/10/29
Sapphire Films  Silicon  
JFET SOS devices: Processing and gamma radiation effects 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Nie JP;  Liu ZL;  He ZJ;  Yu F;  Li GH;  Nie JP Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(209Kb)  |  收藏  |  浏览/下载：1386/242  |  提交时间：2010/10/29
Silicon  
Observation of defects in GaN epilayers 会议论文
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160, TEMPLIN, GERMANY, SEP 07-10, 1997
作者:  Kang JY;  Liu XL;  Ogawa T;  Kang JY Gakushuin Univ Dept Phys Tokyo 171 Japan.
Adobe PDF(235Kb)  |  收藏  |  浏览/下载：1305/215  |  提交时间：2010/11/15
Scattering  Sapphire  Growth  
Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate 会议论文
COMPOUND SEMICONDUCTORS 1997, 156, SAN DIEGO, CALIFORNIA, SEP 08-11, 1997
作者:  Jiang DS;  Ramsteiner M;  Brandt O;  Ploog KH;  Tews H;  Graber A;  Averbeck R;  Riechert H;  Jiang DS Paul Drude Inst Solid State Elect D-10117 Berlin Germany.
Adobe PDF(268Kb)  |  收藏  |  浏览/下载：1411/249  |  提交时间：2010/11/15
Shallow Donors