JFET SOS devices: Processing and gamma radiation effects

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	JFET SOS devices: Processing and gamma radiation effects
	Nie JP; Liu ZL; He ZJ; Yu F; Li GH; Nie JP Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	1998
会议名称	5th International Conference on Solid-State and Integrated Circuit Technology
会议录名称	1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS
页码	67-70
会议日期	OCT 21-23, 1998
会议地点	BEIJING, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-4306-9
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	A process for fabricating n channel JFET/SOS (junction field-effect transistors on silicon-on-sapphire) has been researched. The gate p(+)n junction was obtained by diffusion, and the conductive channel was gotten by a double ion implantation. Both enhancement and depletion mode transistors were fabricated in different processing conditions. From the results of the Co-50 gamma ray irradiation experimental we found that the devices had a good total dose radiation-hardness. When the tot;ll dose was 5Mrad(Si), their threshold voltages shift was less than 0.1V. The variation of transconductance and the channel leakage current were also little.
关键词	Silicon
学科领域	半导体材料
主办者	Chinese Inst Electr.; IEEE Electron Devices Soc.; IEEE Solid State Circuits Soc.; Japan Soc Appl Phys.; URSI Commiss D.; IEE, Electr Div, UK.; Korea Inst Telemat & Electr.; IEEE Beijing Sect.; Mat Res Soc.; Natl Nat Sci Fdn China.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13817
专题	中国科学院半导体研究所（2009年前）
通讯作者	Nie JP Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Nie JP,Liu ZL,He ZJ,et al. JFET SOS devices: Processing and gamma radiation effects[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,1998:67-70.

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