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A new half-flash architecture for high speed video ADC 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Shi Y;  Li SZ;  Zhu RH;  Wang SJ;  Shi Y Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(206Kb)  |  收藏  |  浏览/下载：1194/278  |  提交时间：2010/10/29
Artificial neural networks expecting more advanced microelectronics technology 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Wang SJ;  Wang SJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：771/0  |  提交时间：2010/10/29
An analysis of the performance of a new high-speed single-way analog switch 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Wang P;  Shi Y;  Li SZ;  Wang P Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(198Kb)  |  收藏  |  浏览/下载：1141/323  |  提交时间：2010/10/29
The design of cascaded resistors in a new analog switch two-step ADC architecture 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Li SZ;  Shi Y;  Zhu RH;  Wang SJ;  Li SZ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(203Kb)  |  收藏  |  浏览/下载：1116/268  |  提交时间：2010/10/29
Room-temperature continuous-wave lasing from InAs GaAs quantum dot laser grown by molecular beam epitaxy 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Gong Q;  Liang JB;  Xu B;  Wang ZG;  Gong Q Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(114Kb)  |  收藏  |  浏览/下载：1027/177  |  提交时间：2010/10/29
Threshold  Operation  Layer  
Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Mo QW;  Fan TW;  Gong Q;  Wu J;  Wang ZG;  Bai YQ;  Zhang W;  Mo QW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(201Kb)  |  收藏  |  浏览/下载：1440/316  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Coherent Islands  Gaas  Growth  Dots  Dislocations  Temperature  Mechanisms  Si(001)  Ingaas