Room-temperature continuous-wave lasing from InAs GaAs quantum dot laser grown by molecular beam epitaxy

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	Room-temperature continuous-wave lasing from InAs GaAs quantum dot laser grown by molecular beam epitaxy
	Gong Q; Liang JB; Xu B; Wang ZG; Gong Q Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
	1998
会议名称	5th International Conference on Solid-State and Integrated Circuit Technology
会议录名称	1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS
页码	705-706
会议日期	OCT 21-23, 1998
会议地点	BEIJING, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-4306-9
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	Quantum dot lasers are predicted to have proved lasing characteristics compared to quantum well and quantum wire lasers. We report on quantum dot lasers with active media of vertically stacked InAs quantum dots layers grown by molecular beam epitaxy. The laser diodes were fabricated and the threshold current density of 220 A/cm(2) was achieved at room temperature with lasing wavelength of 951 nm. The characteristic temperature To was measured to be 333K and 157K for the temperature range of 40-180K and 180-300K, respectively.
关键词	Threshold Operation Layer
学科领域	半导体材料
主办者	Chinese Inst Electr.; IEEE Electron Devices Soc.; IEEE Solid State Circuits Soc.; Japan Soc Appl Phys.; URSI Commiss D.; IEE, Electr Div, UK.; Korea Inst Telemat & Electr.; IEEE Beijing Sect.; Mat Res Soc.; Natl Nat Sci Fdn China.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13835
专题	中国科学院半导体研究所（2009年前）
通讯作者	Gong Q Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Gong Q,Liang JB,Xu B,et al. Room-temperature continuous-wave lasing from InAs GaAs quantum dot laser grown by molecular beam epitaxy[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,1998:705-706.

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