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Directed XOR/XNOR logic circuit implemented by microring resonators: simulation and demonstration 会议论文
3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 276: Art. No. 012105 2011, Wuhan, PEOPLES R CHINA, NOV 02-05, 2010
作者:  Zhang L (Zhang Lei);  Ji RQ (Ji Ruiqiang);  Jia LX (Jia Lianxi);  Yang L (Yang Lin);  Zhou P (Zhou Ping);  Tian YH (Tian Yonghui);  Chen P (Chen Ping);  Lu YY (Lu Yangyang);  Jiang ZY (Jiang Zhenyu);  Liu YL (Liu Yuliang)
Adobe PDF(784Kb)  |  收藏  |  浏览/下载：2834/617  |  提交时间：2011/07/15
A simple method to realize large-bandwidth and high-efficiency wavelength conversion in Si waveguide 会议论文
, Shanghai, PEOPLES R CHINA, 2009
作者:  Jia LX (Jia Lianxi);  Geng MM (Geng Minming);  Zhang L (Zhang Lei);  Yang L (Yang Lin);  Chen P (Chen Ping);  Liu YL (Liu Yuliang)
Adobe PDF(270Kb)  |  收藏  |  浏览/下载：1788/452  |  提交时间：2010/06/04
Reconfigurable Optical Add-Drop Multiplexer Based on Silicon Photonic Wire Waveguide 会议论文
, Shanghai, PEOPLES R CHINA, 2009
作者:  Geng MM (Geng Minming);  Jia LX (Jia Lianxi);  Zhang L (Zhang Lei);  Yang L (Yang Lin);  Chen P (Chen Ping);  Wang T (Wang Tong);  Liu YL (Liu Yuliang);  Geng, MM, Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(406Kb)  |  收藏  |  浏览/下载：2269/516  |  提交时间：2010/06/04
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Zeng, YX (Zeng, Yuxin);  Liu, W (Liu, Wei);  Yang, FH (Yang, Fuhua);  Xu, P (Xu, Ping);  Tan, PH (Tan, Pingheng);  Zheng, HZ (Zheng, Houzhi);  Zeng, YP (Zeng, Yiping);  Xing, YJ (Xing, Yingjie);  Yu, DP (Yu, Dapeng);  Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(561Kb)  |  收藏  |  浏览/下载：1719/264  |  提交时间：2010/03/29
Inas Quantum Dot  Photoluminescence  Modulation-doped  Field Effect Transistor  Mu-m  Capping Layer  
High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES, 3419, TAIPEI, TAIWAN, JUL 09-11, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Lian P;  Wang LM;  Zhang XY;  Yang YL;  Zhang HQ;  Wang GH;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(307Kb)  |  收藏  |  浏览/下载：1372/275  |  提交时间：2010/10/29
Algainp  Quantum Well  Laser Diode  Mocvd