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AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:  Tang, J;  Wang, XL;  Xiao, HL;  Ran, JX;  Wang, CM;  Wang, XY;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：2040/451  |  提交时间：2010/03/09
Performance  Heterostructures  Optimization  Mobility  
Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Yan, JC;  Wang, JX;  Liu, NX;  Liu, Z;  Li, JM;  Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Adobe PDF(471Kb)  |  收藏  |  浏览/下载：2050/557  |  提交时间：2010/03/09
Algan  Gan Template  A1n Interlayer  Mocvd  Crack  Interference Fringes  
AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Liu, NX;  Yan, JC;  Liu, Z;  Ma, P;  Wang, JX;  Li, JM;  Liu, NX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(370Kb)  |  收藏  |  浏览/下载：2308/749  |  提交时间：2010/03/09
Algan  Ht-algan Buffer  Ht-interlayers  Ultraviolet (Uv) Led  
High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Yan, JC;  Wang, JX;  Liu, Z;  Liu, NX;  Li, JM;  Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3352Kb)  |  收藏  |  浏览/下载：1174/217  |  提交时间：2010/03/09
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