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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Space-grown SI-GaAs and its application
会议论文
2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, SMOLENICE, SLOVAKIA, JUN 30-JUL 05, 2002
作者:
Chen NF
;
Zhong XG
;
Zhang M
;
Lin LY
;
Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(239Kb)
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浏览/下载:1969/365
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提交时间:2010/10/29
Semiinsulating Gallium-arsenide
Floating-zone Growth
Crystal-growth
Zero Gravity
Microgravity
Segregation
Stoichiometry
Silicon
Defects
Insb
Space grown semi-insulating gallium arsenide single crystal and its application
会议论文
IMPACT OF THE GRAVITY LEVEL ON MATERIALS PROCESSING AND FLUID DYNAMICS, 29 (4), WARSAW, POLAND, JUL, 2000
作者:
Chen NF
;
Zhong XR
;
Zhang M
;
Lin LY
;
Chen NF Acad Sinica Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(357Kb)
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浏览/下载:1518/239
  |  
提交时间:2010/11/15
Semiinsulating Gaas
Stoichiometry
Defects
1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Zhang W
;
Pan Z
;
Li LH
;
Zhang RK
;
Lin YW
;
Wu RG
;
Zhang W Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:1201/0
  |  
提交时间:2010/10/29
Gainnas
Photodetector
Resonant Cavity Enhanced
High Speed Property
Molecular-beam Epitaxy
Schottky Photodiodes
Performance
Efficiency
Operation
Bandwidth
Design
Si
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Sun BQ
;
Jiang DS
;
Pan Z
;
Li LH
;
Wu RH
;
Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(112Kb)
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浏览/下载:1240/261
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提交时间:2010/11/15
Molecular Beam Epitaxy
Quantum Wells
Semiconducting Iiiv Materials
Luminescence
Gaasn
The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition
会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:
Sun XL
;
Wang YY
;
Yang H
;
Li JB
;
Zheng LX
;
Xu DP
;
Wang ZG
;
Sun XL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol Beijing 100083 Peoples R China.
Adobe PDF(206Kb)
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浏览/下载:1665/311
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提交时间:2010/11/15
Metalorganic Chemical Vapor Deposition
Cubic Gan
Hexagonal Phase Content
4-circle X-ray Double Crystal Diffraction
Molecular-beam Epitaxy
Gallium Nitride
Thin-films
Silicon
Gaas
Mechanism on exciton-mediated energy transfer in erbium-doped silicon
会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Lei HB
;
Yang QQ
;
Ou HY
;
Wang QM
;
Lei HB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(229Kb)
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收藏
  |  
浏览/下载:1351/251
  |  
提交时间:2010/11/15
Er-doped Silicon
Photoluminescence
Energy Transfer
Al2o3 Wave-guides
Er
Electroluminescence
Epitaxy
Gaas
Investigation on integrated high speed DFB light source and narrow bandwidth RCE photodetector for WDM fiber communication network application
会议论文
ADVANCED PHOTONIC SENSORS: TECHNOLOGY AND APPLICATIONS, 4220, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:
Wang QM
;
Li C
;
Pan Z
;
Luo Y
;
Wang QM Chinese Acad Sci Inst Semicond State Key Join Lab Integrates Optoelect Beijing 100083 Peoples R China.
Adobe PDF(442Kb)
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收藏
  |  
浏览/下载:1365/194
  |  
提交时间:2010/10/29
Gain-coupling Dfb Laser
Ea Modulator
Rce Photodetector
Monolithic Integration
Mu-m
Laser
Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice
会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Wang JN
;
Sun BQ
;
Wang XR
;
Wang YQ
;
Ge WK
;
Jiang DS
;
Wang HL
;
Wang JN Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong Peoples R China.
Adobe PDF(113Kb)
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  |  
浏览/下载:1444/271
  |  
提交时间:2010/11/15
Superlattices
Gaas/alas
Electric Field Domains
Tunnelling
Oscillations
Self-sustained oscillations caused by magnetic field in a weakly-coupled GaAs/AlAs superlattice
会议论文
PHYSICA B, 279 (1-3), HONG KONG, HONG KONG, JUN 21-25, 1999
作者:
Sun BQ
;
Wang JN
;
Jiang DS
;
Wu JQ
;
Wang YQ
;
Ge WK
;
Sun BQ Chinese Acad Sci Inst Semicond NLSM POB 912 Beijing 100083 Peoples R China.
Adobe PDF(138Kb)
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  |  
浏览/下载:1375/228
  |  
提交时间:2010/11/15
Transverse Magnetic Field
Field Domains
Self-sustained Oscillations
Semiconductors
A model of dislocations at the interface of the bonded wafers
会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:
Han WH
;
Yu JZ
;
Wang LC
;
Wei HZ
;
Zhang XF
;
Wang QM
;
Han WH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(76Kb)
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收藏
  |  
浏览/下载:1632/266
  |  
提交时间:2010/10/29
Wafer Bonding
Heteroepitaxy
Lattice Mismatch
Edge-like Dislocations
Thermal Stress
60 Degrees Dislocation Lines
Gaas