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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Advances in high power semiconductor diode lasers - art. no. 682402
会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:
Ma, XY
;
Zhong, L
;
Ma, XY, Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(671Kb)
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浏览/下载:3127/1103
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提交时间:2010/03/09
Laser Diodes
Laser Bar
Stacks
High Power
Power Conversion Efficiency
Reliability
Packaging
High Q-factor TM modes in three-dimensional semiconductor microresonators
会议论文
2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, Seoul, SOUTH KOREA, AUG 26, 2007-AUG 31, 2008
作者:
Yang, YD
;
Huang, YZ
;
Yang, YD, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(166Kb)
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浏览/下载:1105/236
  |  
提交时间:2010/03/09
Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE
会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:
Feng, W (Feng, W.)
;
Pan, JQ (Pan, J. Q.)
;
Zhou, F (Zhou, F.)
;
Zhao, LJ (Zhao, L. J.)
;
Zhu, HL (Zhu, H. L.)
;
Wang, W (Wang, W.)
;
Feng, W, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(417Kb)
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浏览/下载:1277/295
  |  
提交时间:2010/03/29
Buried-heterostructure Lasers
Bandgap Energy Control
Vapor-phase Epitaxy
Pressure Movpe
Converter
Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation - art. no. 60200O
会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:
Zhao, Q
;
Pan, JQ
;
Zhang, J
;
Zhou, GT
;
Wu, J
;
Wang, LF
;
Wang, W
;
Zhao, Q, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(181Kb)
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浏览/下载:1490/337
  |  
提交时间:2010/03/29
Selective-area Growth
Ultra-low-pressure
Integrated Optoelectronics
Optical Pulse Generation
Ring Laser
Subtraction of S-parameters for adiabatic small-signal modulation characteristics of laser diode - art. no. 60201V
会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:
Zhang, SJ
;
Wen, JM
;
Song, HP
;
Zhu, NH
;
Zhang, SJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(287Kb)
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浏览/下载:1421/423
  |  
提交时间:2010/03/29
Semiconductor Laser Diode
Subtraction Method
Scattering Parameters
Intrinsic Response
Thermal Effect
Frequency-response
Metal-free growth of Si/SiO2 nanowires by annealing SiOx (x < 2) films deposited by PECVD
会议论文
Group-IV Semiconductor Nanostructures丛书标题: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, Boston, MA, NOV 29-DEC 02, 2004
作者:
Wang, XX
;
Zhang, JG
;
Wang, QM
;
Wang, XX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(394Kb)
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收藏
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浏览/下载:1181/189
  |  
提交时间:2010/03/29
Silicon Nanowires
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects
会议论文
2005 International Conference on Indium Phosphide and Related Materials丛书标题: CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS, Glasgow, SCOTLAND, MAY 08-12, 2005
作者:
Zhao, YW
;
Dong, ZY
;
Zhao, YW, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 10083, Peoples R China.
Adobe PDF(638Kb)
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浏览/下载:1587/383
  |  
提交时间:2010/03/29
Encapsulated Czochralski Inp
Semiconductor Compound-crystals
Stimulated Current Spectroscopy
Current Transient Spectroscopy
Deep-level Defects
Annealing Ambient
Point-defects
Fe
Phosphide
Donors
Electronic structure and optical property of semiconductor nanocrystallites
会议论文
COMPUTATIONAL MATERIALS SCIENCE, 30 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Xia JB
;
Chang K
;
Li SS
;
Xia JB Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China. 电子邮箱地址: xiajb@red.semi.ac.cn
Adobe PDF(223Kb)
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浏览/下载:1158/297
  |  
提交时间:2010/11/15
Semiconductor Cluster
Self-assembled Quantum Dot
Diluted Magnetic Semiconductor
Electronic Structure
Resonant Tunneling
Quantum Dots
Exciton-states
Spheres
The status, limits and countermeasures in the development of the silicon microelectronics industry
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Liu, ZL
;
Liu, ZL, Chinese Acad Sci, Inst Semicond, Microelect R&D Ctr, Beijing 100083, Peoples R China.
Adobe PDF(530Kb)
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浏览/下载:1025/149
  |  
提交时间:2010/03/29
Silicon Microelectronics
Cmos
Theoretic Limit
Technologic Limit
Economic Limit
Growth and photoluminescence of InAlGaN films
会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
作者:
Li DB
;
Dong X
;
Huang JS
;
Liu XL
;
Xu ZY
;
Wang ZG
;
Li DB Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)
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浏览/下载:1367/347
  |  
提交时间:2010/10/29
Multiple-quantum Wells
Quaternary Alloys
Optical-properties