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Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well 会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:  Ying-Qiang X;  Zhang W;  Niu ZC;  Wu RG;  Wang QM;  Ying-Qiang X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)  |  收藏  |  浏览/下载：1660/495  |  提交时间：2010/10/29
Ganas  Sio2 Encapsulation  Rapid-thermal-annealing  Nitrogen Reorganization  Molecular-beam Epitaxy  Optical-properties  Mu-m  
Growth and characterization of 4H-SiC by horizontal hot-wall CVD 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Sun, GS;  Gao, X;  Wang, L;  Zhao, WS;  Zeng, YP;  Li, JM;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(925Kb)  |  收藏  |  浏览/下载：1395/293  |  提交时间：2010/03/29
Chemical-vapor-deposition  
Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Gao, X;  Li, JM;  Sun, GS;  Zhang, NH;  Wang, L;  Zhao, WS;  Zeng, YP;  Gao, X, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1172Kb)  |  收藏  |  浏览/下载：1177/196  |  提交时间：2010/03/29
Si(111)  Aln  
Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Wang, QY;  Shen, WJ;  Wang, J;  Wang, JH;  Zeng, YP;  Li, JM;  Wang, QY, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(175Kb)  |  收藏  |  浏览/下载：1281/210  |  提交时间：2010/03/29
Ultraviolet-laser Emission  Thin-films  Zinc-oxide  Room-temperature  
Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Sun, GS;  Ning, J;  Zhang, YX;  Gao, X;  Wang, L;  Zhao, WS;  Zeng, YP;  Li, JM;  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(201Kb)  |  收藏  |  浏览/下载：1368/208  |  提交时间：2010/03/29
4h-sic  Lpcvd Homoepitaxial Growth  Thermal Oxidization  Mos Structures  Hot-wall Cvd