中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共9条，第1-9条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Growth behavior of AlInGaN films 会议论文
JOURNAL OF CRYSTAL GROWTH, Sendai, JAPAN, MAY 21-24, 2008
作者:  Shang JZ;  Zhang BP;  Mao MH;  Cai LE;  Zhang JY;  Fang ZL;  Liu BL;  Yu JZ;  Wang QM;  Kusakabe K;  Ohkawa K;  Zhang, BP, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China.
Adobe PDF(813Kb)  |  收藏  |  浏览/下载：2248/416  |  提交时间：2010/03/09
Scanning Electron Microscope  
Low Temperature Deposited Nano-structured Vanadium Oxide Thin Films for Uncooled Infrared Detectors 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Li GK;  Wang XD;  Liang JR;  Ji A;  Hu M;  Yang F;  Liu J;  Wu NJ;  Chen HD;  Li, GK, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(803Kb)  |  收藏  |  浏览/下载：1744/420  |  提交时间：2010/03/09
1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots 会议论文
THIN SOLID FILMS, Awaji Isl, JAPAN, MAY 23-26, 2005
作者:  Yu, J;  Kasper, E;  Oehme, M;  Kasper, E, Univ Stuttgart, Inst Halbleitertech, Pfaffenwaldring 47, D-70569 Stuttgart, Germany. 电子邮箱地址: kasper@iht.uni-stuttgart.de
Adobe PDF(160Kb)  |  收藏  |  浏览/下载：1258/238  |  提交时间：2010/03/29
Sige  
Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文
THIN SOLID FILMS, Taipei, TAIWAN, NOV 12-14, 2004
作者:  Kong LM;  Cai JF;  Wu ZY;  Gong Z;  Niu ZC;  Feng ZC;  Feng, ZC, Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei, Taiwan. 电子邮箱地址: zcfeng@cc.ee.nut.edu.tw
Adobe PDF(152Kb)  |  收藏  |  浏览/下载：1652/489  |  提交时间：2010/03/29
Time-resolved Photoluminescence  
Growth and characterization of semi-insulating GaN films grown by MOCVD 会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
作者:  Fang, CB;  Wang, XL;  Hu, GX;  Wang, JX;  Wang, CM;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
Adobe PDF(429Kb)  |  收藏  |  浏览/下载：1389/359  |  提交时间：2010/03/29
Mocvd  
Nanostructure in the p-layer and its impacts on amorphous silicon solar cells 会议论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, Lisbon, PORTUGAL, SEP 04-09, 2005
作者:  Liao, XB (Liao, Xianbo);  Du, WH (Du, Wenhui);  Yang, XS (Yang, Xiesen);  Povolny, H (Povolny, Henry);  Xiang, XB (Xiang, Xianbi);  Deng, XM (Deng, Xunming);  Sun, K (Sun, Kai);  Liao, XB, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xbliao2003@yahoo.com
Adobe PDF(323Kb)  |  收藏  |  浏览/下载：1692/350  |  提交时间：2010/03/29
Amorphous Semiconductors  
Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001) 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Wang YL;  Wu J;  Chen YH;  Wang ZG;  Zeng YP;  Wang, YL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(4662Kb)  |  收藏  |  浏览/下载：1247/180  |  提交时间：2010/03/29
Layer-ordering Orientation  
Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Shi GX;  Xu B;  Ye XL;  Jin P;  Chen YH;  Wang YL;  Cui CX;  Wang ZG;  Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(869Kb)  |  收藏  |  浏览/下载：1469/273  |  提交时间：2010/03/29
1.3 Mu-m  
Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers 会议论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Beijing, PEOPLES R CHINA, JUN 04-06, 2007
作者:  Wu, BP;  Wu, DH;  Xiong, YH;  Huang, SS;  Ni, HQ;  Xu, YQ;  Niu, ZC;  Wu, BP, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(297Kb)  |  收藏  |  浏览/下载：1610/293  |  提交时间：2010/03/09
Inas Quantum Dots