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Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(192Kb)  |  收藏  |  浏览/下载：1542/262  |  提交时间：2010/11/15
Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers  
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Jiang WH;  Xu HZ;  Xu B;  Ye XL;  Zhou W;  Ding D;  Liang JB;  Wang ZG;  Jiang WH Chinese Acad Sci Inst Semicond Inst Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(320Kb)  |  收藏  |  浏览/下载：1481/285  |  提交时间：2010/11/15
Quantum Dots  High Index  Molecular Beam Epitaxy  Photoluminescence  Surface Segregation  Oriented Gaas  Ingaas  Islands  Wells  Disks  
650nm AlGaInP quantum well lasers for the application of DVD 会议论文
PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899, SINGAPORE, SINGAPORE, DEC 01-03, 1999
作者:  Chen LH;  Ma XY;  Guo L;  Ma J;  Ding HY;  Cao Q;  Wang LM;  Zhang GZ;  Yang YL;  Wang GH;  Tan MQ;  Chen LH Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1494/409  |  提交时间：2010/10/29
Dvd  Laser Diode  Visible  Algainp  Mocvd  Operation  Diodes