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题名: 1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy
作者: Niu, ZC;  Zhang, SY;  Ni, HQ;  Wu, DH;  He, ZH;  Sun, Z;  Han, Q;  Wu, RG
出版日期: 2006
会议日期: SEP 18-22, 2005
摘要: High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn0.425NAs/GaAs (6 nm / 20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellosung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
会议名称: 32nd International Symposium on Compound Semiconductors
KOS主题词: Temperature;  Photoluminescence;  Nitrogen;  Origin;  Diodes
会议文集: Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS
专题: 中国科学院半导体研究所(2009年前)_会议论文

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Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG .1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy .见:WILEY-VCH, INC .Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS ,605 THIRD AVE, NEW YORK, NY 10158-0012 USA ,2006,Vol 3 no 3 3 (3): 631-634
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