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题名: Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer
作者: Gao, X;  Li, JM;  Sun, GS;  Zhang, NH;  Wang, L;  Zhao, WS;  Zeng, YP
出版日期: 2004
会议日期: SEP 20-25, 2004
摘要: Hexagonal GaN films (similar to 3 mu m) were grown on 3c-SiC/Si(111) and carbonized Si(111) substrates using a thick AlN buffer Cracks are observed on the surface of the GaN film grown on the carbonized Si(111), while no cracks are visible on the 3c-SiC/Si(111). XRD exhibits polycrystalline nature of the GaN film grown on the carbonized Si(111) due to poorer crystalline quality of this substrate. Raman spectra reveal that all GaN layers are under tensile stress, and the GaN layer grown on 3c-SiC/Si(111) shows a very low stress value of sigma(xx) = 0.65 Gpa. In low-temperature Photoluminescence spectra the remarkable donor-acceptor-pair recombination and yellow band can be attributed to the incorporation of Si impurities from the decomposition of SiC.
会议名称: 13th International Conference on Semiconducting and Insulating Materials (SIMC XIII)
会议文集: SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Gao, X; Li, JM; Sun, GS; Zhang, NH; Wang, L; Zhao, WS; Zeng, YP .Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer .见:IEEE .SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials,345 E 47TH ST, NEW YORK, NY 10017 USA ,2004,49-52
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