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题名: Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G
作者: Shen, WJ;  Duan, Y;  Wang, J;  Wang, QY;  Zeng, YP
出版日期: 2006
会议日期: AUG 21-26, 2005
摘要: High quality ZnO films have been successfully grown on Si(100) substrates by Metal-organic chemical vapor deposition (MOCVD) technique. The optimization of growth conditions (II-VI ratio, growth temperature, etc) and the effects of film thickness and thermal treatment on ZnO films' crystal quality, surface morphology and optical properties were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL) spectrum, respectively. The XRD patterns of the films grown at the optimized temperature (300 degrees C) show only a sharp peak at about 34.4 degrees corresponding to the (0002) peak of hexagonal ZnO, and the FWHM was lower than 0.4 degrees. We find that under the optimized growth conditions, the increase of the ZnO films' thickness cannot improve their structural and optical properties. We suggest that if the film's thickness exceeds an optimum value, the crystal quality will be degraded due to the large differences of lattice constant and thermal expansion coefficient between Si and ZnO. In PL analysis, samples all displayed only ultraviolet emission peaks and no observable deep-level emission, which indicated high-quality ZnO films obtained. Thermal treatments were performed in oxygen and nitrogen atmosphere, respectively. Through the analysis of PL spectra, we found that ZnO films annealing in oxygen have the strongest intensity and the low FWHM of 10.44 nm(106 meV) which is smaller than other reported values on ZnO films grown by MOCVD.
会议名称: 20th Congress of the International-Commission-for-Optics
KOS主题词: atomic layer deposition;  Photoluminescence;  X-ray crystallography;  Atomic force microscopy;  Pulsed laser deposition;  Thin films;  Photoluminescence;  mechanism;  Epitaxy;  atomic layer deposition;  Metric system;  Silicon
会议文集: ICO20 MATERIALS AND NANOSTRUCTURES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Shen, WJ; Duan, Y; Wang, J; Wang, QY; Zeng, YP .Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G .见:SPIE-INT SOC OPTICAL ENGINEERING .ICO20 MATERIALS AND NANOSTRUCTURES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) ,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2006,6029: G290-G290
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