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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
期刊论文
Materials Science in Semiconductor Processing, 2011
Authors:
Hu, Qiang
;
Wei, Tongbo
;
Duan, Ruifei
;
Yang, Jiankun
;
Huo, Ziqiang
;
Zeng, Yiping
;
Xu, Shu
;
Hu, Q.(huqiang@semi.ac.cn)
Adobe PDF(594Kb)
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View/Download:1269/391
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Submit date:2012/06/14
Carrier Concentration
Etching
Gallium Alloys
Optical Properties
Point Defects
Raman Spectroscopy
Semiconducting Gallium Compounds
Vapor Phase Epitaxy
Vapors
Optical properties of UO2 and PuO2
期刊论文
JOURNAL OF NUCLEAR MATERIALS, 2010, 卷号: 400, 期号: 2, 页码: 151-156
Authors:
Shi HL (Shi Hongliang)
;
Chu MF (Chu Mingfu)
;
Zhang P (Zhang Ping)
;
Zhang, P, Inst Appl Phys & Computat Math, LCP, POB 8009, Beijing 100088, Peoples R China. zhang_ping@iapcm.ac.cn
Adobe PDF(425Kb)
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View/Download:1710/743
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Submit date:2010/06/18
Electronic-structure
Uranium-dioxide
Point-defects
Photoemission
Energy
Approximation
Energetics
Plutonium
Crystal
Spectra
The bipolar doping of ZnS via native defects and external dopants
期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 11, 页码: Art. No. 113704
Authors:
Gai YQ
;
Li JB
;
Yao B
;
Xia JB
;
Gai YQ Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. E-mail Address: jbli@semi.ac.cn
Adobe PDF(180Kb)
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View/Download:1601/512
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Submit date:2010/03/08
Augmented-wave Method
P-type Zno
Point-defects
Ii-vi
Nitrogen
Semiconductors
1st-principles
Compensation
Enhancement
Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Authors:
Cui LJ (Cui L. J.)
;
Zeng YP (Zeng Y. P.)
;
Wang BQ (Wang B. Q.)
;
Zhu ZP (Zhu Z. P.)
;
Cui, LJ, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. E-mail: ljcui@red.semi.ac.cn
Adobe PDF(116Kb)
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View/Download:1105/313
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Submit date:2010/04/11
Characterization
Point Defects
Molecular Beam Epitaxy
Semiconducting Gallium Compounds
Semiconducting Indium Compounds
Semiconducting Ternary Compounds
1.55 Mu-m
Quantum-wells
Temperature
Gaas
Recent research results on deep level defects in semi-insulating InP - Application to improve material quality
会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
Authors:
Zhao, YW (Zhao, Youwen)
;
Dong, ZY (Dong, Zhiyuan)
;
Dong, HW (Dong, Hongwei)
;
Sun, NF (Sun, Niefeng)
;
Sun, TN (Sun, Tongnian)
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(376Kb)
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View/Download:1167/450
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Submit date:2010/03/29
Stimulated Current Spectroscopy
Current Transient Spectroscopy
Fe-doped Inp
Point-defects
Compensation
Temperature
Donors
Traps
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects
会议论文
2005 International Conference on Indium Phosphide and Related Materials丛书标题: CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS, Glasgow, SCOTLAND, MAY 08-12, 2005
Authors:
Zhao, YW
;
Dong, ZY
;
Zhao, YW, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 10083, Peoples R China.
Adobe PDF(638Kb)
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View/Download:1124/383
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Submit date:2010/03/29
Encapsulated Czochralski Inp
Semiconductor Compound-crystals
Stimulated Current Spectroscopy
Current Transient Spectroscopy
Deep-level Defects
Annealing Ambient
Point-defects
Fe
Phosphide
Donors
Annealing ambient controlled deep defect formation in InP
会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
Authors:
Zhao YW
;
Dong ZY
;
Duan ML
;
Sun WR
;
Zeng YP
;
Sun NF
;
Sun TN
;
Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc
Adobe PDF(186Kb)
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View/Download:1067/301
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Submit date:2010/10/29
Fe-doped Inp
Semiinsulating Inp
Point-defects
Pressure
Wafers
Traps
Point defects in III-V compound semiconductors
期刊论文
DEFECTS AND DIFFUSION IN SEMICONDUCTORS, 2000, 卷号: 183-1, 期号: 0, 页码: 85-93
Authors:
Chen N
;
Chen N,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100864,Peoples R China.
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View/Download:708/132
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Submit date:2010/08/12
Compound Semiconductors
Point Defects
Deep Level Centres
Stoichiometry
Molecular-beam Epitaxy
Gaas Single-crystals
Semiinsulating Gallium-arsenide
Semi-insulating Gaas
Electrical-properties
Lattice-parameter
Native Defects
Carbon
Diffractometer
Stoichiometry
Electronic, structural, and optical properties of crystalline yttria
期刊论文
PHYSICAL REVIEW B, 1997, 卷号: 56, 期号: 23, 页码: 14993-15000
Authors:
Xu YN
;
Gu ZQ
;
Ching WY
;
Xu YN,Univ Missouri,Dept Phys,Kansas City,MO 64110 USA.
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View/Download:5300/1578
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Submit date:2010/08/12
Point-defects
Oxide
Y2o3
Alpha-al2o3
Nitride