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Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy 期刊论文
Materials Science in Semiconductor Processing, 2011
Authors:  Hu, Qiang;  Wei, Tongbo;  Duan, Ruifei;  Yang, Jiankun;  Huo, Ziqiang;  Zeng, Yiping;  Xu, Shu;  Hu, Q.(
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Carrier Concentration  Etching  Gallium Alloys  Optical Properties  Point Defects  Raman Spectroscopy  Semiconducting Gallium Compounds  Vapor Phase Epitaxy  Vapors  
Optical properties of UO2 and PuO2 期刊论文
JOURNAL OF NUCLEAR MATERIALS, 2010, 卷号: 400, 期号: 2, 页码: 151-156
Authors:  Shi HL (Shi Hongliang);  Chu MF (Chu Mingfu);  Zhang P (Zhang Ping);  Zhang, P, Inst Appl Phys & Computat Math, LCP, POB 8009, Beijing 100088, Peoples R China.
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Electronic-structure  Uranium-dioxide  Point-defects  Photoemission  Energy  Approximation  Energetics  Plutonium  Crystal  Spectra  
The bipolar doping of ZnS via native defects and external dopants 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 11, 页码: Art. No. 113704
Authors:  Gai YQ;  Li JB;  Yao B;  Xia JB;  Gai YQ Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Augmented-wave Method  P-type Zno  Point-defects  Ii-vi  Nitrogen  Semiconductors  1st-principles  Compensation  Enhancement  
Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Authors:  Cui LJ (Cui L. J.);  Zeng YP (Zeng Y. P.);  Wang BQ (Wang B. Q.);  Zhu ZP (Zhu Z. P.);  Cui, LJ, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. E-mail:
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Characterization  Point Defects  Molecular Beam Epitaxy  Semiconducting Gallium Compounds  Semiconducting Indium Compounds  Semiconducting Ternary Compounds  1.55 Mu-m  Quantum-wells  Temperature  Gaas  
Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
Authors:  Zhao, YW (Zhao, Youwen);  Dong, ZY (Dong, Zhiyuan);  Dong, HW (Dong, Hongwei);  Sun, NF (Sun, Niefeng);  Sun, TN (Sun, Tongnian);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Stimulated Current Spectroscopy  Current Transient Spectroscopy  Fe-doped Inp  Point-defects  Compensation  Temperature  Donors  Traps  
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文
2005 International Conference on Indium Phosphide and Related Materials丛书标题: CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS, Glasgow, SCOTLAND, MAY 08-12, 2005
Authors:  Zhao, YW;  Dong, ZY;  Zhao, YW, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 10083, Peoples R China.
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Encapsulated Czochralski Inp  Semiconductor Compound-crystals  Stimulated Current Spectroscopy  Current Transient Spectroscopy  Deep-level Defects  Annealing Ambient  Point-defects  Fe  Phosphide  Donors  
Annealing ambient controlled deep defect formation in InP 会议论文
Authors:  Zhao YW;  Dong ZY;  Duan ML;  Sun WR;  Zeng YP;  Sun NF;  Sun TN;  Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址:
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Fe-doped Inp  Semiinsulating Inp  Point-defects  Pressure  Wafers  Traps  
Point defects in III-V compound semiconductors 期刊论文
DEFECTS AND DIFFUSION IN SEMICONDUCTORS, 2000, 卷号: 183-1, 期号: 0, 页码: 85-93
Authors:  Chen N;  Chen N,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100864,Peoples R China.
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Compound Semiconductors  Point Defects  Deep Level Centres  Stoichiometry  Molecular-beam Epitaxy  Gaas Single-crystals  Semiinsulating Gallium-arsenide  Semi-insulating Gaas  Electrical-properties  Lattice-parameter  Native Defects  Carbon  Diffractometer  Stoichiometry  
Electronic, structural, and optical properties of crystalline yttria 期刊论文
PHYSICAL REVIEW B, 1997, 卷号: 56, 期号: 23, 页码: 14993-15000
Authors:  Xu YN;  Gu ZQ;  Ching WY;  Xu YN,Univ Missouri,Dept Phys,Kansas City,MO 64110 USA.
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Point-defects  Oxide  Y2o3  Alpha-al2o3  Nitride